Datasheet > F4N60

F4N60

更新时间： 2024-09-28 00:04:27

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其他 - ETC		/
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2页	140K
描述
N-CHANNEL POWER MOSFET

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F4N60 数据手册

Shenzhen SI Semiconductors Co., LTD.

Product Specification

N-CHANNEL POWER MOSFET

F4N60

FEATURES

LOW THERMAL RESISTANCE

ELECTRONIC BALLAST

REPETITIVE AVALANCHE RATED

ELECTRONIC TRANSFORMER

FAST SWITCHING

APPLICATION:

SWITCH MODE POWER SUPPLY

Absolute Maximum Ratings Tc=25°C

TO-220

V_DS=600V

R_DS(ON)=2.2Ω

I_D=4.4A

PARAMETER

SYMBOL

VALUE

UNIT

Drain-source Voltage

Drain-gate Voltage

V_DS

V_GS

600

Continuous Drain Current

TC=25

I_D

4.4

2.8

Continuous Drain Current

TC=100

Total Dissipation

Junction Temperature

Storage Temperature

P_D

105

150

°C

1-GATE 2-DRAIN 3-SOURCE

T_STG

-55-150

Electronic Characteristics Tc=25°C

CHARACTERISTICS

Drain-source Breakdown

Voltage

SYMBOL

TEST CONDITION

MIN

600

2.0

MAX

UNIT

BV_DSS

V_GS=0V, I_D=250µA

Gate Threshold Voltage

V_GS(TH)

5.0

V_GS=V_DS,I_D=250µA

V_DS=Rated BV_DSS

_GS=0V

_DS=0.8RatedBV_DSS

100

µA

Drain-source Leakage Current

I_DSS

250

µA

V_GS=0V TJ=125°C

V_DSI_D(ON)r_DS(ON)MAX

V_GS=10V

On State Drain Current

I_D(ON)

4.4

Gate-body Leakage

Current (V_DS= 0)

Static Drain-source On

Resistance

I_GSS

V_GS

20V

100

2.2

Ω

R_DS(ON)

V_GS=10V, I_D=2.2A

Thermal Resistance

Junction-case

1.2

Si semiconductors 2005.12

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