型号 | 品牌 | 获取价格 | 描述 | 数据表 |
F2N10A | GWSEMI |
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Package : SOT-23; Polarity : Single-N; ESD : |
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F2N5551U-H | FORMOSA |
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Status : Active; Package : SOT-89; Polarity : NPN; VCBOMax.(V) : 18; VCEOMax.(V) : 160; IC |
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F2N5551U-Q1-H | FORMOSA |
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Status : Active; Package : SOT-89; Polarity : NPN; VCBOMax.(V) : 18; VCEOMax.(V) : 160; IC |
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F2N60 | UTC |
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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
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F2N60G-TN3-R | UTC |
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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
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F2N60G-TN3-T | UTC |
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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
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F2N60L-TN3-R | UTC |
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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
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F2N60L-TN3-T | UTC |
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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
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F2P2012NVQ1 TYPE | FENGJUI |
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产品结构 : magnetic cover; 产品应用 : 1. Inductor for |
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F2P2014 | BOTHHAND |
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Design for 5G ethernetUnsupported PoeComplyin |
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