Datasheet > F2N60G-TN3-T

F2N60G-TN3-T

更新时间： 2024-02-17 18:52:19

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
6页	229K
描述
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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F2N60G-TN3-T 数据手册

UNISONIC TECHNOLOGIES CO., LTD

F2N60

Power MOSFET

2A, 600V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC F2N60 is a high voltage power MOSFET and is

designed to have better characteristics, such as fast switching time,

low gate charge, low on-state resistance and have a high rugged

avalanche characteristics. This power MOSFET is usually used at

high speed switching applications in power supplies, PWM motor

controls, high efficient DC to DC converters and bridge circuits.



FEATURES

* R_DS(ON)= 5Ω@V_GS= 10V

* Ultra Low gate charge (typical 16nC)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness



SYMBOL

 ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

F2N60L-TN3-T

F2N60L-TN3-R

F2N60G-TN3-T

F2N60G-TN3-R

TO-252

Tube

Tape Reel

Note: Pin Assignment: G: Gate D: Drain S: Source

www.unisonic.com.tw

1 of 6

QW-R502-952.A

12 3 4 5 6

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