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F20UP20DN PDF预览

F20UP20DN

更新时间: 2024-01-22 04:45:18
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 超快恢复二极管快速恢复二极管光电二极管
页数 文件大小 规格书
5页 937K
描述
Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-263AB, D2PAK-3

F20UP20DN 技术参数

生命周期:Obsolete零件包装代码:D2PAK
包装说明:R-PDSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.79
Is Samacsys:N其他特性:FREE WHEELING DIODE
应用:ULTRA FAST RECOVERY配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-263ABJESD-30 代码:R-PDSO-G2
最大非重复峰值正向电流:100 A元件数量:2
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.04 µs表面贴装:YES
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

F20UP20DN 数据手册

 浏览型号F20UP20DN的Datasheet PDF文件第2页浏览型号F20UP20DN的Datasheet PDF文件第3页浏览型号F20UP20DN的Datasheet PDF文件第4页浏览型号F20UP20DN的Datasheet PDF文件第5页 
June 2006  
FFB20UP20DN  
tm  
10A, 200V Ultrafast Dual Rectifiers  
Features  
Description  
The FFB20UP20DN is an ultrafast rectifier. It has a low  
forward voltage drop and is a silicon nitride passivated ion-  
implanted epitaxial planar construction.  
„ High Reverse Voltage : VRRM = 200V  
„ Avalanche Energy Rated  
„ Planar Construction  
This device is intended for use as a freewheeling/clamping  
rectifier in a variety of switching power supplies and other  
power switching applications. Its low stored charge and  
hyperfast recovery minimize ringing and electrical noise in  
many power switching circuits, thus reducing power loss in  
the switching transistors.  
Applications  
„ Output Rectifiers  
„ Switching Mode Power Supply  
„ Free-wheeling diode for motor application  
„ Power switching circuits  
Pin Assignments  
Absolute Maximum Ratings TC = 25°C unless otherwise noted  
Symbol Parameter  
Ratings  
200  
Units  
VRRM  
VRWM  
VR  
If(avg)  
IFSM  
Peak Repetitive Reverse Voltage  
V
V
V
A
A
Working Peak Reverse Voltage  
DC Blocking Voltage  
200  
200  
Average Rectified Forward Current  
@ TC = 155oC  
10  
Non-repetitive Peak Surge Current  
60Hz Single Half-Sine Wave  
100  
TJ, TSTG  
Operating Junction and Storage Temperature  
-55 to +175  
°C  
Thermal Characteristics TC = 25°C unless otherwise noted  
Symbol  
Max  
3.5  
Units  
°C/W  
Parameter  
1
RθJC  
Maximum Thermal Resistance, Junction to Case  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
Tape Width  
Quantity  
F20UP20DN  
F20UP20DN  
TO-263  
13”  
24mm  
800  
©2006 Fairchild Semiconductor Corporation  
FFB20UP20DN Rev. A  
1
www.fairchildsemi.com  

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