F1410

更新时间： 2024-01-09 07:17:41

品牌	Logo	应用领域
POLYFET		晶体晶体管功率场效应晶体管栅
页数	文件大小	规格书
2页	39K
描述
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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技术参数
数据手册

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F1410 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.75	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	10 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	200 °C	极性/信道类型：	N-CHANNEL
子类别：	FET General Purpose Power	Base Number Matches：	1

F1410 数据手册

polyfet rf devices

F1410

General Description

PATENTED GOLD METALIZED

SILICON GATE ENHANCEMENT MODE

RF POWER VDMOS TRANSISTOR

Silicon VDMOS and LDMOS

transistors designed specifically

for broadband RF applications.

Suitable for Military Radios,

Cellular and Paging Amplifier Base

Stations, Broadcast FM/AM, MRI,

Laser Driver and others.

120Watts Single Ended

Package Style AT

"Polyfet" process features

gold metal for greatly extended

lifetime. Low output capacitance

HIGH EFFICIENCY, LINEAR,

HIGH GAIN, LOW NOISE

and high F enhance broadband

performance

ABSOLUTE MAXIMUM RATINGS (TC = 25 C)

Total

Junction to

Maximum

Junction

Temperature

Storage

DC Drain

Current

Drain to

Gate

Voltage

Drain to

Source

Voltage

Gate to

Source

Voltage

Device

Dissipation

Case Thermal

Resistance

Temperature

250 Watts

0.8

10 A

150 V

150V

C/W

200 C

-65 C to 150 C

30V

RF CHARACTERISTICS ( 120WATTS OUTPUT )

SYMBOL

Gps

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Common Source Power Gai

Drain Efficiency

Idq = 0.4 A, Vds = 50.0V, F = 175 MHz

VSWR

Load Mismatch Toleranc

20:1

Relative Idq = 0.4 A, Vds = 50.0V, F = 175 MHz

ELECTRICAL CHARACTERISTICS (EACH SIDE)

SYMBOL

Bvdss

Idss

PARAMETER

MIN

125

TYP

MAX

UNITS

TEST CONDITIONS

Ids = 0.1 A,

Vds = 50.0 V, Vgs = 0V

Drain Breakdown Voltag

Zero Bias Drain Curren

Vgs = 0V

Igss

Gate Leakage Curren

Vds = 0 V,

Vgs = 30V

Vgs = Vds

Vgs

Gate Bias for Drain Curren

Forward Transconductanc

Saturation Resistanc

Ids =0.15 A,

Mho

Ohm

Amp

4.8

0.25

28.8

270

Vds = 10V, Vgs = 5V

Rdson

Idsat

Ciss

Vgs = 20V, Ids = 10A

Saturation Curren

Vgs = 20V, Vds = 10V

Common Source Input Capacitanc

Common Source Feedback Capacitanc

Common Source Output Capacitanc

Vds = 50.0 V, Vgs = 0V, F = 1 MHz

Crss

13.2

120

Coss

REVISION 8/1/97

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

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