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F1419 PDF预览

F1419

更新时间: 2024-09-19 10:29:19
品牌 Logo 应用领域
POLYFET 晶体晶体管射频微波
页数 文件大小 规格书
2页 40K
描述
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

F1419 数据手册

 浏览型号F1419的Datasheet PDF文件第2页 
polyfet rf devices  
F1419  
General Description  
PATENTED GOLD METALIZED  
SILICON GATE ENHANCEMENT MODE  
RF POWER VDMOS TRANSISTOR  
Silicon VDMOS and LDMOS  
transistors designed specifically  
for broadband RF applications.  
Suitable for Military Radios,  
Cellular and Paging Amplifier Base  
Stations, Broadcast FM/AM, MRI,  
40Watts Push - Pull  
Package Style AQ  
Laser Driver and others.  
TM  
"Polyfet" process features  
gold metal for greatly extended  
lifetime. Low output capacitance  
and high Ft enhance broadband  
performance  
HIGH EFFICIENCY, LINEAR,  
HIGH GAIN, LOW NOISE  
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)  
Total  
Junction to  
Maximum  
Junction  
Temperature  
Storage  
DC Drain  
Current  
Drain to  
Gate  
Voltage  
Drain to  
Source  
Voltage  
Gate to  
Source  
Voltage  
Device  
Dissipation  
Case Thermal  
Resistance  
Temperature  
o
o
o
o
100 Watts  
1.5  
4 A  
150 V  
150V  
C/W  
200 C  
-65 C to 150 C  
30V  
RF CHARACTERISTICS (  
40 WATTS OUTPUT )  
SYMBOL  
Gps  
PARAMETER  
MIN  
10  
TYP  
MAX  
UNITS  
dB  
TEST CONDITIONS  
Common Source Power Gain  
Drain Efficiency  
Idq = 0.8 A, Vds = 50.0 V, F = 400 MHz  
Idq = 0.8 A, Vds = 50.0 V, F = 400 MHz  
65  
%
h
VSWR  
Load Mismatch Tolerance  
20:1  
Relative Idq = 0.8 A, Vds = 50.0 V, F = 400 MHz  
ELECTRICAL CHARACTERISTICS (EACH SIDE)  
SYMBOL  
Bvdss  
Idss  
PARAMETER  
MIN  
125  
TYP  
MAX  
UNITS  
V
TEST CONDITIONS  
Ids = 0.1 A,  
Vds = 50.0V, Vgs = 0V  
Drain Breakdown Voltage  
Zero Bias Drain Current  
Vgs = 0V  
4
1
7
mA  
uA  
Igss  
Gate Leakage Current  
Vds = 0 V,  
Vgs = 30V  
Vgs = Vds  
Vgs  
Gate Bias for Drain Current  
Forward Transconductance  
Saturation Resistance  
1
Ids = 0.2 A,  
V
Mho  
Ohm  
Amp  
pF  
gM  
1.6  
0.7  
9.6  
90  
Vds = 10V, Vgs = 5V  
Rdson  
Idsat  
Ciss  
Vgs = 20V, Ids = 4A  
Saturation Current  
Vgs = 20V, Vds = 10V  
Common Source Input Capacitance  
Common Source Feedback Capacitance  
Common Source Output Capacitance  
Vds = 50.0 V, Vgs = 0V, F = 1 MHz  
Vds = 50.0 V, Vgs = 0V, F = 1 MHz  
Vds = 50.0 V, Vgs = 0V, F = 1 MHz  
Crss  
Coss  
4.4  
40  
pF  
pF  
REVISION 8/1/97  
POLYFET RF DEVICES  
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com  

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