F1419
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
40Watts Push - Pull
Package Style AQ
Laser Driver and others.
TM
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Junction to
Maximum
Junction
Temperature
Storage
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
Device
Dissipation
Case Thermal
Resistance
Temperature
o
o
o
o
100 Watts
1.5
4 A
150 V
150V
C/W
200 C
-65 C to 150 C
30V
RF CHARACTERISTICS (
40 WATTS OUTPUT )
SYMBOL
Gps
PARAMETER
MIN
10
TYP
MAX
UNITS
dB
TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Idq = 0.8 A, Vds = 50.0 V, F = 400 MHz
Idq = 0.8 A, Vds = 50.0 V, F = 400 MHz
65
%
VSWR
Load Mismatch Tolerance
20:1
Relative Idq = 0.8 A, Vds = 50.0 V, F = 400 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
Bvdss
Idss
PARAMETER
MIN
125
TYP
MAX
UNITS
V
TEST CONDITIONS
Ids = 0.1 A,
Vds = 50.0V, Vgs = 0V
Drain Breakdown Voltage
Zero Bias Drain Current
Vgs = 0V
4
1
7
mA
uA
Igss
Gate Leakage Current
Vds = 0 V,
Vgs = 30V
Vgs = Vds
Vgs
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
1
Ids = 0.2 A,
V
Mho
Ohm
Amp
pF
gM
1.6
0.7
9.6
90
Vds = 10V, Vgs = 5V
Rdson
Idsat
Ciss
Vgs = 20V, Ids = 4A
Saturation Current
Vgs = 20V, Vds = 10V
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
Vds = 50.0 V, Vgs = 0V, F = 1 MHz
Vds = 50.0 V, Vgs = 0V, F = 1 MHz
Vds = 50.0 V, Vgs = 0V, F = 1 MHz
Crss
Coss
4.4
40
pF
pF
REVISION 8/1/97
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com