Datasheet > F0285B

F0285B

更新时间： 2024-11-20 19:54:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	78K
描述
Visible LED

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中文翻译

获取价格

技术参数
数据手册

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F0285B 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84	Base Number Matches：	1

F0285B 数据手册

InGaN-High Brightness Lumineszenzdiode (470 nm)

InGaN High Brightness Light Emitting Diode (470 nm)

F 0285B

Vorläufige Daten / Preliminary Data

Wesentliche Merkmale

Features

• Typ. Gesamtleistung: 3.3 mW @ 20 mA (im

5mm Radial Gehäuse)

• Typ. radiant power: 3.3 mW @ 20 mA (in 5mm

Radial package)

• Optische Effizienz: 2 lm/W (5mm Gehäuse)

• Chipgröße 260 x 260

• Optical efficiency: 2 lm/W (5mm package)

• Chipsize 260 x 260

• Wellenlänge 470 nm (blau)

• Technologie: InGaN

• Wavelength 470 nm (blue)

• Technology: InGaN

• SiC-Substrat

• SiC-substrate

• ESD-Klasse 2

• ESD class 2 rating

Anwendungen

Applications

• Informationsanzeigen im Außenbereich

• optischer Indikator

• Outdoor displays

• Optical indicators

• Hinterleuchtung (LCD, Schalter, Tasten,

Displays, Werbebeleuchtung,

Allgemeinbeleuchtung)

• backlighting (LCD, switches, keys, displays,

illuminated advertising, general lighting)

• Innenbeleuchtung im Automobilbereich

• Markierungsbeleuchtung

• Signal- und Symbolleuchten

• Scanner

• Interior automotive lighting

• Marker lights

• Signal and symbol luminaire

• Scanner

Typ

Type

Bestellnummer

Ordering Code

Gehäuse

Package

F 0285B

on request

Blau (470 nm) emittierender Chip InGaN Chip

blue light (470 nm) emitting InGaN diode

2002-02-21

12 3 4 5 6 7 8

中文翻译

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