SFF250M
SFF250Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
30 AMP / 200 Volts
0.060 Ω typical
SFF250 __ __ __
Screening 2/ __ = Not Screen
TX = TX Level
N-Channel POWER MOSFET
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
TXV = TXV Level
S = S Level
Features:
Lead Option 3/
__ = Straight Leads
DB = Down Bend
UB = Up Bend
• Rugged Construction with Polysilicon Gate Cell
• Low RDS(ON) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dV/dt Performance
• Increased Reverse Energy Capability
Package 3/ M = TO-254
Z = TO-254Z
• Low Input and Transfer Capacitance for Easy Paralleling
• Ceramic Seals Available for Improved Hermeticity
• Hermetically Sealed Surface Mount Power Package
• TX, TXV, Space Level Screening Available
• Replacement for IRFM250 Types
Maximum Ratings
Symbol
Value
Units
Volts
Volts
Amps
ºC
Drain – Source Voltage
VDS
VGS
200
±20
Gate – Source Voltage
Continuous Collector Current
Operating & Storage Temperature
ID
30
Top & Tstg
-55 to +150
Maximum Thermal Resistance
Junction to Case
ºC/W
W
1
RθJC
PD
TC = 25ºC
TC = 55ºC
125
95
Total Device Dissipation
TO-254 (M)
TO-254Z (Z)
For Pin Out Configuration and Optional Lead Bend, See Page 3.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00049E
DOC