Datasheet > ESN35A030MK

ESN35A030MK

更新时间： 2024-12-01 03:34:51

品牌	Logo	应用领域
EUDYNA		/
页数	文件大小	规格书
4页	104K
描述
High Voltage - High Power GaN-HEMT

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ESN35A030MK 数据手册

Eudyna GaN-HEMT 30W

ES/EGN35A030MK

Preliminary

High Voltage - High Power GaN-HEMT

FEATURES

・

High Voltage Operation : VDS=50V

・

High Power : 46.0dBm (typ.) @ P3dB

・High Efficiency: 55%(typ.) @ P3dB

・Linear Gain : 13.0dB(typ.) @ f=3.5GHz

・Proven Reliability

DESCRIPTION

Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

consistency and broad bandwidth for high power L-band amplifiers with 50V

operation, and gives you higher gain.

This device target applications are low current and wide band applications for

high voltage.

ABSOLUTE MAXIMUM RATINGS

Item

Symbol

Condition

Rating

120

Unit

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

GSꢀꢀꢀꢀꢀ Tc=25^oCꢀꢀꢀꢀ

ꢀꢀ -5

Tstg

-65 to +175

250

^oC

RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25^oC)

Item

DC Input Voltage

Symbol

Condition

Limit

Unit

Forward Gate Current

Reverse Gate Current

Channel Temperature

=15 Ω

<TBD

>-2.2

200

^oC

RG=15 Ω

ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^oC)

Item

Symbol Condition

Limit

min. Typ. Max.

Unit

Pinch-Off Voltage

DS=50V IDS=11mA -1.0

-2.0

-350

46.0

-3.5

Gate-Drain Breakdown Voltage

3dB Gain Compression Power

Drain Efficiency

VGDO

GS=- 5.6 mA

TBD

P3dB

DS=50V

ꢀ dBm

DS(DC)=200mA

Linear Gain

f=3.5GHz

TBD

13.0

2.5

^oC/W

Thermal Resistance

Rth

Channel to Case

3.0

Edition 1.2

Dec. 2005

12 3 4

中文翻译

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