Datasheet > ESN26A180IV

ESN26A180IV

更新时间： 2024-11-30 03:34:51

品牌	Logo	应用领域
EUDYNA		/
页数	文件大小	规格书
4页	106K
描述
High Voltage - High Power GaN-HEMT

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ESN26A180IV 数据手册

Eudyna GaN-HEMT 180W

ES/EGN26A180IV

Preliminary

High Voltage - High Power GaN-HEMT

FEATURES

・

High Voltage Operation : VDS=50V

・

High Power : 53.0dBm (typ.) @ P3dB

・High Efficiency: 55%(typ.) @ P3dB

・Linear Gain : 14.0dB(typ.) @ f=2.6GHz

・Proven Reliability

DESCRIPTION

Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

consistency and broad bandwidth for high power L-band amplifiers with 50V

operation, and gives you higher gain.

This device target applications are low current and wide band applications for

high voltage.

ABSOLUTE MAXIMUM RATINGS

Item

Symbol

Condition

=25^oC

Rating

120

Unit

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

VDS

VGS

-5

281.25

-65 to +175

250

Tstg

^oC

RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25^oC)

Item

Symbol

Condition

Limit

Unit

DC Input Voltage

Forward Gate Current

Reverse Gate Current

Channel Temperature

=2 Ω

<TBD

>-7.2

200

^oC

=2 Ω

ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^oC)

Item

Symbol Condition

Limit

min. Typ. Max.

Unit

Pinch-Off Voltage

DS=50V IDS=72mA -1.0

-2.0

-350

53.0

-3.5

Gate-Drain Breakdown Voltage

3dB Gain Compression Power

Drain Efficiency

VGDO

GS=- 36mA

TBD

P3dB

DS=50V

ꢀ dBm

IDS(DC)=1000mA

Linear Gain

f=2.6GHz

TBD

14.0

0.65

Thermal Resistance

Rth

Channel to Case

0.8ꢀ ^oC/W

Edition 1.2

Dec. 2005

12 3 4

中文翻译

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