Datasheet > ESL03B03-F

ESL03B03-F

更新时间： 2024-11-30 23:13:35

品牌	Logo	应用领域
NIEC		肖特基二极管
页数	文件大小	规格书
6页	55K
描述
Schottky Barrier Diode

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中文翻译

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数据手册

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ESL03B03-F 数据手册

SBD Type : ESL03B03-F

OUTLINE DRAWING

FEATURES

* TO-252AA Case, Surface Mounting Device

* Extremely Low Forward Voltage drop

* Low Power Loss

* High Surge Capability

* Packaged in 16mm Tape and Reel

Maximum Ratings

Approx Net Weight:0.30g

ESL03B03-F

Symbol

V_RRM

Unit

Rating

Repetitive Peak Reverse Voltage

50Hz Half Sine Wave

Resistive Load

4.71

Average Rectified Output Current

RMS Forward Current

I_O

3.0

Tc=82°C

I_F(RMS)

I_FSM

50Hz Half Sine Wave,1cycle,

Non-repetitive

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

Tjw

Tstg

- 40 to + 100

- 40 to + 125

°C

Electrical • Thermal Characteristics

Characteristics

Peak Reverse Current

Peak Forward Voltage

Symbol

I_RM

V_FMTj=25°C,I_FM= 3 A

Rth(j-c)

Conditions

Min Typ Max Unit

Tj=25°C,V_RM=V_RRM

3.0

0.47

°C/W

Thermal Resistance Junction to Case

12 3 4 5 6

中文翻译

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