Datasheet > ESGD100

ESGD100

更新时间： 2024-02-14 12:27:40

品牌	Logo	应用领域
三洋 - SANYO		二极管
页数	文件大小	规格书
2页	19K
描述
X Band, Mixer, Modulator Applications

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技术参数
数据手册

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ESGD100 技术参数

生命周期：	Obsolete	零件包装代码：	CSP
包装说明：	R-XBCC-N2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.60	风险等级：	5.79
Is Samacsys：	N	配置：	SINGLE
最大二极管电容：	0.32 pF	二极管元件材料：	SILICON
二极管类型：	MIXER DIODE	JESD-30 代码：	R-XBCC-N2
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR	封装形式：	CHIP CARRIER
认证状态：	Not Qualified	子类别：	Microwave Mixer Diodes
表面贴装：	YES	技术：	SCHOTTKY
端子形式：	NO LEAD	端子位置：	BOTTOM
Base Number Matches：	1

ESGD100 数据手册

Ordering number : ENN7320A

ESGD100

GaAs Schottky Barrier Diode

ESGD100

X Band, Mixer, Modulator Applications

Features

Package Dimensions

unit : mm

1321A

•

Environmentally-considered chip scale package.

Less parasitic components, conversion loss.

•

[ESGD100]

Type No. Indication^{(Top view)}

0.05

0.5

0.05

0.6

Top View

Marking

Bottom View

1 : Anode

2 : Cathode

Specifications

0.6

SANYO : ECSP1006-2

Absolute Maximum Ratings at Ta=25°C

Parameter

Peak Reverse Voltage

Symbol

Conditions

Ratings

Unit

4.5

4.0

150

Reverse Voltage

Peak Forward Current

Average Rectified Current

Junction Temperature

Operating Temperature

Storage Temperature

Mounting Temperature

°C

150

Topr

Tstg

--40 to +85

--55 to +150

230

10s

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Forward Voltage

Symbol

Conditions

Unit

min

max

1.0

I =20mA

0.8

Reverse Voltage

I =10µA

4.0

Interterminal Capacitance

Series Resistance

=0, f=1MHz

0.22

1.5

0.32

3.5

Ω

I =20mA

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

61003 TS IM TA-100642 / D2502 TS IM TA-100197 No.7320-1/2

中文翻译

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与ESGD100相关器件

型号	品牌	获取价格	描述	数据表
ESH	KEMET	获取价格	Aluminum Electrolytic Capacitors
ESH05A15	NIEC	获取价格	Schottky Barrier Diode
ESH05A15-F	NIEC	获取价格	Schottky Barrier Diode
ESH05A15-F	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
ESH105M050AC3AA	KEMET	获取价格	ESH, Aluminum Electrolytic, 105C, 1 uF, 20%, 50 V, -40/105C, Lead Spacing = 2mm
ESH105M050AC3JA	KEMET	获取价格	ESH, Aluminum Electrolytic, 1 uF, 20%, 50 VDC
ESH105M100AC3DA	KEMET	获取价格	ESH, Aluminum Electrolytic, 1 uF, 20%, 100 VD
ESH106M035AC3JA	KEMET	获取价格	ESH, Aluminum Electrolytic, 10 uF, 20%, 35 VD
ESH106M063AC3AA	KEMET	获取价格	Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 63V, 20% +Tol, 20% -Tol, 10uF,
ESH106M100AE3AA	KEMET	获取价格	Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 100V, 20% +Tol, 20% -Tol, 10uF

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