ESH05A15

更新时间： 2024-09-22 23:14:47

品牌	Logo	应用领域
NIEC		整流二极管肖特基二极管瞄准线
页数	文件大小	规格书
6页	50K
描述
Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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ESH05A15 数据手册

SBD T y p e : ESH05A15

OULINE DRAWING

FEATURES

*TO-251AA Case

*High Voltage Low leakage Current

*Low Forward Voltage Drop

*Low Power Loss,High Efficiency

*High Surge Capability

*Tj=150 °C operation

Maximum Ratings

Approx Net Weight: 0.35g

Rating

Symbol

V_RRM

I_O

I_F(RMS)

I_FSM

ESH05A15

150

Unit

Repetitive Peak Reverse Voltage

1.6 Ta=29°C *2

5.0 Tc=125°C

50 Hz half Sine Wave

Resistive Load

Average Rectified Output Current *1

RMS Forward Current *1

7.85

50Hz Half Sine Wave ,1cycle

Non-repetitive

Surge Forward Current *1

130

Operating JunctionTemperature Range

Storage Temperature Range

T_jw

T_stg

-40 to +150

°C

Electrical • Thermal Characteristics

Characteristics

Peak Reverse Current

Peak Forward Voltage

Symbol

I_RM

Conditions

Min. Typ. Max. Unit

Tj= 25°C, V_RM= V_RRM

Tj= 25°C, I_FM= 5 A

V_FM

0.88

Junction to Ambient

Thermal Resistance

Rth(j-a) P.C.Board Mounted *2

Rth(j-c)

80 °C /W

°C /W

Junction to Case

*1: Anode Terminals 1 and 3 Connected

*2: P.C. Board mounted, Print Land=20x20mm

12 3 4 5 6

中文翻译

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