5秒后页面跳转
ESDALC6V1M3 PDF预览

ESDALC6V1M3

更新时间: 2024-11-18 03:22:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 瞬态抑制器二极管局域网
页数 文件大小 规格书
8页 327K
描述
Dual low capacitance TRANSIL⑩ array for ESD protection

ESDALC6V1M3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PBCC-N3针数:236
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50Factory Lead Time:11 weeks
风险等级:1.56Is Samacsys:N
其他特性:LOW LEAKAGE CURRENT最大击穿电压:7.2 V
最小击穿电压:6.1 V击穿电压标称值:6.65 V
外壳连接:CATHODE配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:MO-236AAJESD-30 代码:R-PBCC-N3
JESD-609代码:e4湿度敏感等级:3
最大非重复峰值反向功率耗散:30 W元件数量:2
端子数量:3最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
认证状态:Not Qualified子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
Base Number Matches:1

ESDALC6V1M3 数据手册

 浏览型号ESDALC6V1M3的Datasheet PDF文件第2页浏览型号ESDALC6V1M3的Datasheet PDF文件第3页浏览型号ESDALC6V1M3的Datasheet PDF文件第4页浏览型号ESDALC6V1M3的Datasheet PDF文件第5页浏览型号ESDALC6V1M3的Datasheet PDF文件第6页浏览型号ESDALC6V1M3的Datasheet PDF文件第7页 
ESDALC6V1M3  
Dual low capacitance TRANSIL™ array for ESD protection  
Main product applications  
Where transient overvoltage protection in ESD  
sensitive equipment is required, such as:  
Computers  
Printers  
SOT 883  
(JEDEC MO-236AA Compliant)  
Communication systems  
Cellular phone handsets and accessories  
Video equipment  
Configuration  
Features  
I/O2  
2
I/O1  
1
2 unidirectional low capacitance TRANSIL  
diodes  
Breakdown Voltage VBR = 6.1 V min  
Low diode capacitance (11 pF typ at 0 V)  
Low leakage current < 0.5 µA  
Very small PCB area: 0.6 mm²  
RoHS compliant  
3
GND  
Underside view  
Order code  
Description  
The ESDALC6V1M3 is a monolithic array  
designed to protect 1 line or 2 lines against ESD  
transients.  
Part number  
ESDALC6V1M3  
Marking  
K
The device is ideal for applications where both  
reduced line capacitance and board space saving  
are required.  
Complies with the following standards  
IEC61000-4-2 level 4:  
15 kV (air discharge)  
Benefits  
8 kV (contact discharge)  
MIL STD 883E-Method 3015-7: class 3  
High ESD protection level  
High integration  
HBM (Human Body Model)  
Suitable for high density boards  
TRANSIL is a trademark of STMicroelectronics  
June 2006  
Rev 3  
1/8  
www.st.com  

与ESDALC6V1M3相关器件

型号 品牌 获取价格 描述 数据表
ESDALC6V1M3_08 STMICROELECTRONICS

获取价格

Dual low capacitance Transil array for ESD protection
ESDALC6V1M3R KEXIN

获取价格

2-Unidirectional ESD Protection Diodes
ESDALC6V1M6 STMICROELECTRONICS

获取价格

4 and 5 line low capacitance TRANSIL array for ESD protection
ESDALC6V1M6_08 STMICROELECTRONICS

获取价格

4- and 5-line low capacitance Transil arrays for ESD protection
ESDALC6V1P ETC

获取价格

QUAD LOW CAPACITANCE TRANSIL ARRAY FOR ESD PROTECTION
ESDALC6V1P3 STMICROELECTRONICS

获取价格

ASD (Application Specific Devices) Low capaci
ESDALC6V1P5 STMICROELECTRONICS

获取价格

QUAD LOW CAPACITANCE TRANSIL ARRAY FOR ESD PROTECTION
ESDALC6V1P6 STMICROELECTRONICS

获取价格

QUAD LOW CAPACITANCE TRANSIL⑩ ARRAY FOR ESD P
ESDALC6V1PX STMICROELECTRONICS

获取价格

ASD (Application Specific Devices) Low capaci
ESDALC6V1PX_08 STMICROELECTRONICS

获取价格

Low capacitance Transil⑩ arrays for ESD prote