ESD5641DXX
Electrical characteristics (TA = 25oC, unless otherwise noted)
Table 3.
Reverse
Junction
Reverse
Standoff
Voltage
VRWM (V)
Max.
Breakdown voltage
VBR(V) IBR = 1mA
Forward voltage
VF(V) IF = 20mA
capacitance
F=1MHz,
leakage current
IRM(nA) at VRWM
Type number
VR=0V (pF)
Min.
8.0
Typ.
9.0
Max.
10.0
15.5
17.0
19.0
Typ.
10
1
Max.
1000
500
Min.
0.45
0.45
0.45
0.45
Max.
1.25
1.25
1.25
1.25
Typ.
2200
1500
1200
1000
Max.
3000
2000
1800
1500
ESD5641D07
ESD5641D10
ESD5641D12
ESD5641D15
7.5
10.0
12.0
15.0
11.5
13.0
16.0
13.5
15.0
17.5
1
100
1
100
Table 4.
Rated peak pulse
Clamping voltage
Rated peak pulse
Clamping voltage
current IPP (A)1)3) VCL(V) at IPP(A)1)3)
current IPP(A)2)3)
VCL(V) at IPP(A)2)3)
Type number
Max.
190
170
150
130
Max.
18
Max.
28
Max.
13
ESD5641D07
ESD5641D10
ESD5641D12
ESD5641D15
23
22
18
27
16
20
30
13
25
Notes:
1) Non-repetitive current pulse, according to IEC61000-4-5. (8/20μs current waveform)
2) Non-repetitive current pulse, according to IEC61643-321. (10/1000μs current waveform)
3) Measured from pin 3 to pin 1 and pin 2.
Will Semiconductor Ltd.
3
Revision 1.6, 2022/04/23