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ESD128-B1-W0201 PDF预览

ESD128-B1-W0201

更新时间: 2024-11-16 14:55:59
品牌 Logo 应用领域
英飞凌 - INFINEON 射频二极管
页数 文件大小 规格书
14页 628K
描述
双向超低电容 ESD / 瞬态保护二极管 ? 高速数据和射频线路的 ESD /瞬态保护根据以下要求实行: – IEC61000-4-2 (ESD):±15 kV(空气/接触)? – IEC61000-4-4 (EFT): 40 A (5/50 ns)? – IEC61000-4-5(浪涌):2 A (8/20 μs)? ? 最大工作电压:VRWM ±18 V? ? 极低的电容:CL = 0.3 pF(典型值)? ? 低箝位电压:IPP = 16 A 时 VCL = 32 V(典型值) ? 反向电流极低 IR <1 nA(典型值) ? 外形精巧,低至 0.58 x 0.28 x 0.15 mm3 ? 无铅(符合 RoHS)和无卤封装 ? NFC

ESD128-B1-W0201 数据手册

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ESD128-B1-W0201  
Bi-directional ESD protection device, 18 V (AC), 13 V (DC), 0.3 pF, 0201  
Product description  
This Infineon ESD (electrostatic discharge) protection device has a bi-directional and symmetric  
I/V characteristic and excellent clamping performance.  
Feature list  
ESD / transient protection according to:  
-
-
-
IEC61000-4-2 (ESD): ±15 kV (air) / ±15 kV (contact)  
IEC61000-4-4 (EFT): ±2 kV / ±40 A (5/50 ns)  
IEC61000-4-5 (Surge): ±2 A (8/20 μs)  
Bi-directional maximum working voltage: VWM = ±18 V (AC), ±13 V (DC)  
Line capacitance: CL = 0.3 pF at f = 1 MHz  
Clamping voltage: Vcl = 32 V at ITLP = 16 A with Rdyn = 0.85 Ω  
Very low leakage current: IL = 1 nA  
Small form factor SMD size 0201, low profile (0.58 x 0.28 x 0.15 mm³)  
Potential applications  
ESD protection of RF signal lines in near field communication NFC applications  
Product validation  
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.  
Device information  
K
K
Figure 1  
Table 1  
Pin configuration with marking (bottom view)  
Part information  
Product name / Ordering code  
Package Pin configuration  
Marking Pieces / Reel  
15 k  
ESD128-B1-W0201 / ESD128B1W0201E6327XTSA1 WLL-2-1 1 line, bi-directional  
K
Datasheet  
Please read the Important Notice and Warnings at the end of this document  
v2.0  
www.infineon.com  
2020-11-12  

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