Datasheet > ESD128-B1-W0201

ESD128-B1-W0201

更新时间： 2024-10-04 14:55:59

品牌	Logo	应用领域
英飞凌 - INFINEON		射频二极管
页数	文件大小	规格书
14页	628K
描述
双向超低电容 ESD / 瞬态保护二极管 ? 高速数据和射频线路的 ESD /瞬态保护根据以下要求实行： – IEC61000-4-2 (ESD)：±15 kV（空气/接触）? – IEC61000-4-4 (EFT): 40 A (5/50 ns)? – IEC61000-4-5（浪涌）：2 A (8/20 μs)? ? 最大工作电压：VRWM ±18 V? ? 极低的电容：CL = 0.3 pF（典型值）? ? 低箝位电压：IPP = 16 A 时 VCL = 32 V（典型值） ? 反向电流极低 IR <1 nA（典型值） ? 外形精巧，低至 0.58 x 0.28 x 0.15 mm3 ? 无铅（符合 RoHS）和无卤封装 ? NFC

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ESD128-B1-W0201 数据手册

ESD128-B1-W0201

Bi-directional ESD protection device, 18 V (AC), 13 V (DC), 0.3 pF, 0201

Product description

This Infineon ESD (electrostatic discharge) protection device has a bi-directional and symmetric

I/V characteristic and excellent clamping performance.

Feature list

•

ESD / transient protection according to:

IEC61000-4-2 (ESD): ±15 kV (air) / ±15 kV (contact)

IEC61000-4-4 (EFT): ±2 kV / ±40 A (5/50 ns)

IEC61000-4-5 (Surge): ±2 A (8/20 μs)

•

Bi-directional maximum working voltage: V_WM= ±18 V (AC), ±13 V (DC)

Line capacitance: C_L= 0.3 pF at f = 1 MHz

Clamping voltage: V_cl= 32 V at I_TLP= 16 A with R_dyn= 0.85 Ω

Very low leakage current: I_L= 1 nA

Small form factor SMD size 0201, low profile (0.58 x 0.28 x 0.15 mm³)

Potential applications

•

ESD protection of RF signal lines in near field communication NFC applications

Product validation

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Device information

Figure 1

Table 1

Pin configuration with marking (bottom view)

Part information

Product name / Ordering code

Package Pin configuration

Marking Pieces / Reel

15 k

ESD128-B1-W0201 / ESD128B1W0201E6327XTSA1 WLL-2-1 1 line, bi-directional

Datasheet

Please read the Important Notice and Warnings at the end of this document

v2.0

www.infineon.com

2020-11-12

12 3 4 5 6 7...14

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