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ESD10201 PDF预览

ESD10201

更新时间: 2024-02-28 07:14:22
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 119K
描述
Low Capacitance ESD Protection Diodes

ESD10201 数据手册

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ESD10201  
Low Capacitance ESD  
Protection Diodes  
Micro−package Diodes for ESD Protection  
The ESD10201 is designed to protect voltage sensitive components  
that require ultra−low capacitance from ESD and transient voltage  
events. Excellent clamping capability, low capacitance, low leakage,  
and fast response time make these parts ideal for ESD protection on  
designs where board space is at a premium. It has industry leading  
capacitance linearity over voltage making it ideal for RF applications.  
www.onsemi.com  
1
2
Features  
MARKING  
DIAGRAM  
Low Capacitance 0.3 pF (Typical)  
Low Clamping Voltage  
Small Body Outline Dimensions: (0.62 x 0.32 mm) − 0201  
Low Body Height: 0.3 mm  
PIN 1  
Y M  
X3DFN2  
CASE 152AF  
Working Voltage: 21 V  
IEC61000−4−2 Level 4 ESD Protection  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
Y
M
= Specific Device Code  
= Date Code  
*Date Code orientation and/or position may vary de-  
pending upon manufacturing location.  
Typical Applications  
RF Signal ESD Protection  
Wireless Charger  
ORDERING INFORMATION  
RF Switching, PA, and Antenna ESD Protection  
Near Field Communications  
Device  
Package  
Shipping  
ESD10201MUT5G  
X3DFN2  
(Pb−Free)  
15000 / Tape &  
Reel  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Symbol  
Value  
15  
Unit  
kV  
kV  
A
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
IEC 61000−4−2 (ESD) (Note 1) Air  
IEC 61000−4−2 (ESD) (Note 1) Contact  
IEC 61000−4−5 (ESD) (Note 2)  
12  
1
Total Power Dissipation (Note 3) @ T = 25°C  
°P °  
250  
400  
mW  
°C/W  
A
D
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
Junction and Storage Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
Lead Solder Temperature − Maximum  
(10 Second Duration)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Non−repetitive current pulse at T = 25°C, per IEC61000−4−2 waveform.  
A
2. Non−repetitive current pulse at T = 25°C, per IEC61000−4−5 waveform.  
A
3. Mounted with recommended minimum pad size, DC board FR−4  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
May, 2015 − Rev. 0  
ESD10201/D  
 

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