Datasheet > ESD05V02D-C

ESD05V02D-C

更新时间： 2024-11-18 12:56:43

品牌	Logo	应用领域
优恩 - UNSEMI		半导体
页数	文件大小	规格书
3页	505K
描述
优恩半导体ESD静电保护器

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数据手册

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ESD05V02D-C 数据手册

Transient Voltage Suppressors for ESD Protection

ESD05V02D-C

Description

0201/DFN0603

The ESD05V02D-C is ultra low capacitance TVS arrays

designed to protect high speed data interfaces. This series has

been specifically designed to protect sensitive components

which are connected to high-speed data and transmission lines

from over-voltage caused by ESD (electrostatic discharge),

CDE (Cable Discharge Events), and EFT (electrical fast

transients).

Feature

Functional Diagram

30 Watts Peak Pulse Power per Line (tp=8/20μs)

Surface mount package

Low clamping voltage

Working voltages : 5V

Low leakage

IEC61000-4-2 (ESD) Level 4 ESD protection

Ultra small SMD package:0201

Applications

Cell Phone Handsets and Accessories

Microprocessor based equipment

Personal Digital Assistants (PDA’s)

Notebooks, Desktops, and Servers

Portable Instrumentation

Peripherals

Mechanical Data

Case:0201/DFN0603 Package molded plastic.

Terminals: Gold plated, solderable per MIL-STD-750,

Method 2026.

Polarity: Color band denotes cathode end.

Mounting position: Any

Pagers

Reel Size : 7 inch

Mechanical Characteristics

Symbol

Parameter

Value

Units

P_PP

I_PP

Peak Pulse Power (tp=8/20μs waveform)

Peak Pulse Current (tp=8/20μs waveform)

Operating Junction Temperature Range

Storage Temperature Range

2.0

T_J

-55 to +125

ºC

T_STG

T_L

-55 to +150

ºC

Soldering Temperature, t max = 10s

260

ºC

Air Discharge

Contact Discharge

IEC61000-4-2 (ESD)

UN Semiconductor Co., Ltd.

www.unsemi.com.tw

@ UN Semiconductor Co., Ltd. 2013

Specifications are subject to change without notice.

Revision December 18, 2013

1 / 3

Please refer to www.unsemi.com.tw for current information.

12 3

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