Datasheet > ESAB82-004_01

ESAB82-004_01

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
富士电机 - FUJI		肖特基二极管
页数	文件大小	规格书
3页	51K
描述
SCHOTTKY BARRIER DIODE

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数据手册

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ESAB82-004_01 数据手册

ESAB82-004 (5A)

(40V / 5A )

Characteristics

Reverse Characteristic (typ.)

Forward Characteristic (typ.)

Tj=150°C

Tj=125°C

10¹

Tj=100°C

10⁰

Tj=150°C

Tj=125°C

Tj=100°C

10^-1

10^-2

10^-3

Tj=25°C

0.1

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

VF Forward Voltage (V)

VR Reverse Voltage (V)

Forward Power Dissipation

Reverse Power Dissipation

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

2.0

1.5

1.0

0.5

0.0

360°

Square wave λ=160°C

Square wave λ=120°C

Sine wave λ=180°C

=180°C

Square wave λ=180°C

Per 1element

2.5

0.0

0.5

1.0

1.5

2.0

3.0

VR Reverse Voltage (V)

Io Average Forward Current (A)

Junction Capacitance Characteristic (typ.)

Current Derating (Io-Tc)

160

150

140

130

120

110

100

1000

100

Sine wave λ=180°C

Square wave λ=180°C

Square wave λ=120°C

Square wave λ=60°C

360°

VR=30V

100

IO Average Output Current (A)

VR Reverse Voltage (V)

λ:Conduction angle of forward current for each rectifier element

Io:Output current of center-tap full wave connection

123

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