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ES2FHE3/5BT PDF预览

ES2FHE3/5BT

更新时间: 2024-12-01 20:04:59
品牌 Logo 应用领域
威世 - VISHAY 功效光电二极管
页数 文件大小 规格书
5页 95K
描述
DIODE 2 A, 300 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode

ES2FHE3/5BT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.54
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:50 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:300 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

ES2FHE3/5BT 数据手册

 浏览型号ES2FHE3/5BT的Datasheet PDF文件第2页浏览型号ES2FHE3/5BT的Datasheet PDF文件第3页浏览型号ES2FHE3/5BT的Datasheet PDF文件第4页浏览型号ES2FHE3/5BT的Datasheet PDF文件第5页 
ES2F, ES2G  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount Ultrafast Plastic Rectifier  
FEATURES  
• Glass passivated pellet chip junction  
• Ideal for automated placement  
• Ultrafast reverse recovery time  
• Low switching losses, high efficiency  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3  
DO-214AA (SMB)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in high frequency rectification and freewheeling  
application in switching mode converters and inverters for  
consumer, computer, and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
2.0 A  
VRRM  
IFSM  
300 V, 400 V  
50 A  
MECHANICAL DATA  
Case: DO-214AA (SMB)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B,.....)  
trr  
35 ns  
VF at IF  
1.1 V  
TJ max.  
Package  
Diode variations  
150 °C  
DO-214AA (SMB)  
Single die  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
ES2F  
EF  
ES2G  
EG  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRWM  
VRMS  
IF(AV)  
300  
225  
210  
400  
300  
280  
V
V
V
A
Maximum average forward rectified current at TL = 110 °C  
2.0  
50  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
°C  
Revision: 25-Feb-16  
Document Number: 88588  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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