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ES2D

更新时间: 2024-11-27 06:57:51
品牌 Logo 应用领域
TSC 二极管光电二极管功效
页数 文件大小 规格书
2页 185K
描述
2.0 AMPS. Surface Mount Super Fast Rectifiers

ES2D 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-C2Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.06
Is Samacsys:N其他特性:UL RECOGNIZED
应用:EFFICIENCY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.95 VJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2湿度敏感等级:1
最大非重复峰值正向电流:50 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Pure Tin (Sn)
端子形式:C BEND端子位置:DUAL
Base Number Matches:1

ES2D 数据手册

 浏览型号ES2D的Datasheet PDF文件第2页 
ES2A - ES2J  
2.0 AMPS. Surface Mount Super Fast Rectifiers  
SMB/DO-214AA  
.083(2.10)  
.077(1.95)  
.147(3.73)  
.137(3.48)  
Features  
Glass passivated junction chip  
For surface mounted application  
Low profile package  
.187(4.75)  
.167(4.25)  
.012(.31)  
.006(.15)  
Built-in strain relief  
Ideal for automated placement  
Easy pick and place  
Superfast recovery time for high efficiency  
Glass passivated chip junction  
.103(2.61)  
.078(1.99)  
.012(.31)  
.006(.15)  
High temperature soldering:  
O
260 C/10 seconds at terminals  
.056(1.41)  
.035(0.90)  
.008(.20)  
.004(.10)  
Plastic material used carries Underwriters  
Laboratory Classification 94V-0  
.209(5.30)  
.201(5.10)  
Mechanical Data  
Cases: Molded plastic  
Dimensions in inches and (millimeters)  
Terminals: Pure tin plated, lead free.  
Polarity: Indicated by cathode band  
Packing: 12mm tape per EIA STD RS-481  
Weight: 0.093 gram  
Maximum Ratings and Electrical Characteristics  
O
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Symbol ES ES ES ES ES ES ES ES  
2A 2B 2C 2D 2F 2G 2H 2J  
50 100 150 200 300 400 500 600  
Type Number  
Units  
Maximum Recurrent Peak Reverse  
Voltage  
V
VRRM  
Maximum RMS Voltage  
35  
50 100 150 200 300 400 500 600  
2.0  
70 105 140 210 280 350 420  
V
V
VRMS  
VDC  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current See Fig. 1  
A
A
V
I(AV)  
IFSM  
VF  
Peak Forward Surge Current, 8.3 ms  
Single Half Sine-wave Superimposed on  
Rated Load (JEDEC method )  
50  
Maximum Instantaneous Forward Voltage  
@ 2.0A  
0.95  
1.3  
1.7  
Maximum DC Reverse Current  
o
10  
uA  
uA  
@TA =25 C at Rated DC Blocking Voltage  
o
IR  
@ TA=100 C  
350  
Maximum Reverse Recovery Time  
( Note 1 )  
Trr  
35  
nS  
pF  
Typical Junction Capacitance ( Note 2 )  
Cj  
RθJA  
RθJL  
TJ  
25  
20  
Maximum Thermal Resistance (Note 3)  
75  
20  
o
C /W  
o
Operating Temperature Range  
Storage Temperature Range  
-55 to +150  
-55 to +150  
C
o
TSTG  
C
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied VR=4.0 Volts  
Notes:  
3. Units Mounted on P.C.B. 0.4” x 0.4” (10mm x 10mm) Pad Areas  
Version: A06  

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