Datasheet > ES2ABF

ES2ABF

更新时间： 2022-02-26 14:42:20

品牌	Logo	应用领域
海德 - HDSEMI		/
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4页	1391K
描述
SMBF Plastic-Encapsulate Diodes

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数据手册

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ES2ABF 数据手册

ES2ABF THRU ES2JBF

HD BF56

SMBF Plastic-Encapsulate Diodes

Super Fast Recovery Rectifier Diode

Features

●I

SMBF

●VRRM

50V-600V

●High surge current capability

Glass passivated chip

●

Polarity: Color band denotes cathode

Applications

●Rectifier

Marking

● ES2ABF-ES2JBF : ES2AB-ES2JB

ES2

Item

Symbol

Unit

Test Conditions

ABF BBFCBF DBF FBFGBF HBF JBF

Repetitive Peak Reverse Voltage

V_RRM

50 100 150 200 300 400 500 600

70 105 140 210 280 350 420

Maximum RMS Voltage

RMS

60HZ Half-sine wave, Resistance

load, T_L=110℃

Average Forward Current

I_F(AV)

2.0

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave ,1 cycle ,

Ta =25℃

I_FSM

Junction Temperature

Storage Temperature

T_J

℃

-55~+150

T_STG

-55 ~ +150

Electrical Characteristics (T =25℃ Unless otherwise specified）

ES2

Item

Symbol

Unit

Test Condition

ABF BBFCBF DBF FBF GBF HBF JBF

V_F

I_F=2.0A

0.95

1.25

1.7

Peak Forward Voltage

Maximum reverse recovery

time

t_rr

I_F=0.5A,I_R=1.0A,I_rr=0.25A

I_RRM1

I_RRM2

T =25℃

5.0

μA

V_RM=V_RRM

Peak Reverse Current

T =100℃

100

75¹⁾

20¹⁾

R_θ

Between junction and ambient

Between junction and terminal

J-A

Thermal

Resistance(Typical)

℃/W

R_θ

J-L

Notes:

Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper

pad areas

igh Diode Semiconductor

12 3 4

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