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ES29LV800DT-90TGI PDF预览

ES29LV800DT-90TGI

更新时间: 2024-02-06 06:41:14
品牌 Logo 应用领域
EXCELSEMI 闪存
页数 文件大小 规格书
53页 700K
描述
16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

ES29LV800DT-90TGI 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FBGA, BGA48,6X8,32Reach Compliance Code:unknown
风险等级:5.84最长访问时间:90 ns
备用内存宽度:8启动块:TOP
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PBGA-B48
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:16湿度敏感等级:3
部门数/规模:1,2,1,15端子数量:48
字数:524288 words字数代码:512000
最高工作温度:70 °C最低工作温度:
组织:512KX16封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA48,6X8,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
并行/串行:PARALLEL电源:3/3.3 V
认证状态:Not Qualified就绪/忙碌:YES
部门规模:16K,8K,32K,64K最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.03 mA
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
切换位:YES类型:NOR TYPE
Base Number Matches:1

ES29LV800DT-90TGI 数据手册

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E S I  
E S I  
Excel Semiconductor inc.  
ES29LV160E  
16Mbit(2M x 8/1M x 16)  
CMOS 3.0 Volt-only, Boot Sector Flash Memory  
• Minimum 100,000 program/erase cycles per sector  
• 20 Year data retention at 125oC  
GENERAL FEATURES  
• Single power supply operation  
- 2.7V -3.6V for read, program and erase operations  
SOFTWARE FEATURES  
• Sector Structure  
- 16Kbyte x 1, 8Kbyte x 2, 32Kbyte x 1 boot sectors  
- 64Kbyte x 31 sectors  
• Erase Suspend / Erase Resume  
• Data# poll and toggle for Program/erase status  
• CFI ( Common Flash Interface) supported  
• Unlock Bypass program  
• Autoselect mode  
• Auto-sleep mode after tACC + 30ns  
• Top or Bottom boot block  
- ES29LV160ET for Top boot block device  
- ES29LV160EB for Bottom boot block device  
• Package Options  
- 48-pin TSOP  
- 48-ball FBGA ( 6 x 8 mm )  
- Pb-free packages  
HARDWARE FEATURES  
• Hardware reset input pin ( RESET#)  
- Provides a hardware reset to device  
- All Pb-free products are RoHS-Compliant  
- Any internal device operation is terminated and the  
device returns to read mode by the reset  
• Low Vcc write inhibit  
• Manufactured on 0.18um process technology  
• Compatible with JEDEC standards  
- Pinout and software compatible with single-power  
supply flash standard  
• Ready/Busy# output pin ( RY/BY#)  
- Provides a program or erase operational status  
about whether it is finished for read or still being  
progressed  
DEVICE PERFORMANCE  
• Sector protection / unprotection ( RESET# , A9 )  
- Hardware method of locking a sector to prevent  
any program or erase operation within that sector  
- Two methods are provided :  
• Read access time  
- 70ns / 90ns  
- In-system method by RESET# pin  
- A9 high-voltage method for PROM programmers  
• Program and erase time  
- Program time : 6us/byte, 8us/word ( typical )  
- Sector erase time : 0.7sec/sector ( typical )  
• Temporary Sector Unprotection ( RESET# )  
- Allows temporary unprotection of previously  
protected sectors to change data in-system  
• Power consumption (typical values)  
- 200nA in standby or automatic sleep mode  
- 9mA active read current at 5 MHz  
- 15mA active write current during program or erase  
1
Rev. 0B January 5 , 2006  
ES29LV160E  

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