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ES1C-HE3/5AT PDF预览

ES1C-HE3/5AT

更新时间: 2024-11-25 15:32:03
品牌 Logo 应用领域
威世 - VISHAY 瞄准线光电二极管
页数 文件大小 规格书
4页 88K
描述
1A, 150V, SILICON, SIGNAL DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

ES1C-HE3/5AT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:compliant风险等级:5.55
其他特性:FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:150 V最大反向恢复时间:0.025 µs
表面贴装:YES端子面层:MATTE TIN
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

ES1C-HE3/5AT 数据手册

 浏览型号ES1C-HE3/5AT的Datasheet PDF文件第2页浏览型号ES1C-HE3/5AT的Datasheet PDF文件第3页浏览型号ES1C-HE3/5AT的Datasheet PDF文件第4页 
ES1A thru ES1D  
Vishay General Semiconductor  
Surface Mount Ultrafast Plastic Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Ultrafast recovery times for high efficiency  
• Low forward voltage, low power losses  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Solder dip 260 °C, 40 s  
DO-214AC (SMA)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in high frequency rectification and  
freewheeling application in switching mode converters  
and inverters for consumer, computer, automotive and  
telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
VRRM  
IFSM  
trr  
50 V to 200 V  
30 A  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
15 ns  
VF  
0.92 V  
Epoxy meets UL 94V-0 flammability rating  
TJ max.  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC-Q101 qualified), meets JESD 201 class 2  
whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
ES1A  
EA  
50  
ES1B  
EB  
ES1C  
EC  
ES1D  
ED  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
100  
70  
150  
105  
150  
200  
140  
200  
V
V
V
A
35  
Maximum DC blocking voltage  
Maximum average forward rectified current (Fig. 1)  
50  
100  
IF(AV)  
1
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
30  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
www.vishay.com  
650  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 88586  
Revision: 27-Aug-08  

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