Datasheet > ES1A

ES1A

更新时间： 2024-01-19 06:01:00

品牌	Logo	应用领域
DAESAN		二极管光电二极管
页数	文件大小	规格书
3页	410K
描述
CURRENT 1.0 Ampere VOLTAGE 50 to 400 Volts

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技术参数
数据手册

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ES1A 技术参数

生命周期：	Active	包装说明：	O-PALF-W2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.55
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JESD-30 代码：	O-PALF-W2
元件数量：	1	端子数量：	2
最大输出电流：	0.7 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
认证状态：	Not Qualified	最大反向恢复时间：	1.5 µs
表面贴装：	NO	端子形式：	WIRE
端子位置：	AXIAL	Base Number Matches：	1

ES1A 数据手册

CURRENT 1.0 Ampere

VOLTAGE 50 to 400 Volts

ES1A THRU ES1J

Features

· For surface applications in order to optimize board space

· Low profile package

· Built-in strain relief, ideal for automated placement

· Super fast recovery time

· Glass passivated junction

· Plastic package has Unerwrites Laboratory

Flammability Classification 94V-0

DO-214AC (SMA)

0.058(1.47)

0.052(1.32)

0.110(2.79)

0.100(2.54)

· Ideally suited for use in very high frequency switching

power supplies, inverters and as free wheeling diodes

· Low forward voltage drop

0.177(4.50)

0.157(3.99)

· Glass passivated chip junction

0.012(0.31)

0.006(0.15)

· High temperature soldering guaranteed : 250℃/10

seconds, at terminals

0.090(2.29)

0.078(1.98)

Mechanical Data

0.005(0.127)

MAX.

0.060(1.52)

0.030(0.76)

· Case : JEDEC SMA(DO-214AC) molded plastic body

· Terminals : Plated axial lead solderable per

MIL-STD-750, method 2026

· Polarity : Color band denotes cathode end

· Mounting Position : Any

· Weight : 0.002 ounce, 0.064 gram

0.208(5.28)

0.194(4.93)

Dimensions in inches and (millimeters)

Maximum Ratings And Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive

load. For capacitive load, derate by 20%)

Symbols

ES1A

ES1B

ES1C

ES1D

ES1G

ES1J

Units

Maximum recurrent peak reverse voltage

Maximum RMS voltage

RRM

RMS

100

150

105

150

200

140

200

400

380

400

600

420

600

Volts

Maximum DC blocking voltage

100

Maximum average forward rectified current

at TL=120℃

(AV)

1.0

Amp

Amps

Volts

μA

Peak forward surge current 8.3ms single

half sine-wave superimposed on rated load

(JEDEC method)

IFSM

30.0

Maximum instantaneous forward voltage

at 1.0A

0.95

1.25

=25℃

5.0

Maximum reverse

current at rated voltage

=100℃

100

Trr

Maximum reverse recovery time (Note 1)

Typical thermal resistance (Note 3)

Typical junction capacitance (Note 2)

RθJL

RθJA

35.0

85.0

℃/W

7.0

Operating unction and storage

temperature range

℃

-55 to +150

TSTG

Notes:

(1) Test conditions: IF=0.5A, IR=1.0A, Irr=0.25A.

(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.

(3) P.C.B mounted on 0.2×0.2"(5.0×5.0mm) copper pad areas

12 3

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