Discr ete P OWER & Sign a l
Tech n ologies
ES2A - ES2D
0.185 (4.699)
0.160 (4.064)
Features
0.083 (2.108)
0.075 (1.905)
•
For surface mount applications.
0.155 (3.937)
0.130 (3.302)
• Glass passivated junction.
• Low profile package.
• Easy pick and place.
• Built-in strain relief.
2
1
0.220 (5.588)
0.200 (5.080)
SMB/DO-214AA
COLOR BAND DENOTES CATHODE
0.096 (2.438)
0.083 (2.108)
• Superfast recovery times for
high efficiency.
0.008 (0.203)
0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
0.050 (1.270)
0.030 (0.762)
2.0 Ampere Superfast Rectifiers
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
IO
Average Rectified Current
.375 " lead length @ TA = 110°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
2.0
A
if(surge)
50
A
PD
1.66
13.3
W
mW/°C
Derate above 25°C
Thermal Resistance, Junction to Ambient**
75
RθJA
RθJL
Tstg
TJ
°C/W
Thermal Resistance, Junction to Lead**
Storage Temperature Range
20
°C/W
°C
-50 to +150
-50 to +150
Operating Junction Temperature
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
TA = 25°C unless otherwise noted
Parameter
Device
Units
2A
50
35
50
2B
100
70
2C
2D
200
140
200
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
150
105
150
V
V
V
100
DC Reverse Voltage
Maximum Reverse Current
@ rated VR TA = 25°C
TA = 100°C
(Rated VR)
10
350
µA
µA
nS
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
Maximum Forward Voltage @ 2.0 A
20
0.90
18
V
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
pF
ES2A-ES2D, Rev.
A
1999 Fairchild Semiconductor Corporation