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ES08S PDF预览

ES08S

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
3页 46K
描述
2.0 Ampere Superfast Rectifiers

ES08S 数据手册

 浏览型号ES08S的Datasheet PDF文件第2页浏览型号ES08S的Datasheet PDF文件第3页 
Discr ete P OWER & Sign a l  
Tech n ologies  
ES2A - ES2D  
0.185 (4.699)  
0.160 (4.064)  
Features  
0.083 (2.108)  
0.075 (1.905)  
For surface mount applications.  
0.155 (3.937)  
0.130 (3.302)  
Glass passivated junction.  
Low profile package.  
Easy pick and place.  
Built-in strain relief.  
2
1
0.220 (5.588)  
0.200 (5.080)  
SMB/DO-214AA  
COLOR BAND DENOTES CATHODE  
0.096 (2.438)  
0.083 (2.108)  
Superfast recovery times for  
high efficiency.  
0.008 (0.203)  
0.004 (0.102)  
0.012 (0.305)  
0.006 (0.152)  
0.050 (1.270)  
0.030 (0.762)  
2.0 Ampere Superfast Rectifiers  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
IO  
Average Rectified Current  
.375 " lead length @ TA = 110°C  
Peak Forward Surge Current  
8.3 ms single half-sine-wave  
Superimposed on rated load (JEDEC method)  
Total Device Dissipation  
2.0  
A
if(surge)  
50  
A
PD  
1.66  
13.3  
W
mW/°C  
Derate above 25°C  
Thermal Resistance, Junction to Ambient**  
75  
RθJA  
RθJL  
Tstg  
TJ  
°C/W  
Thermal Resistance, Junction to Lead**  
Storage Temperature Range  
20  
°C/W  
°C  
-50 to +150  
-50 to +150  
Operating Junction Temperature  
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
**Device mounted on FR-4 PCB 0.013 mm.  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Parameter  
Device  
Units  
2A  
50  
35  
50  
2B  
100  
70  
2C  
2D  
200  
140  
200  
Peak Repetitive Reverse Voltage  
Maximum RMS Voltage  
150  
105  
150  
V
V
V
100  
DC Reverse Voltage  
Maximum Reverse Current  
@ rated VR TA = 25°C  
TA = 100°C  
(Rated VR)  
10  
350  
µA  
µA  
nS  
Maximum Reverse Recovery Time  
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A  
Maximum Forward Voltage @ 2.0 A  
20  
0.90  
18  
V
Typical Junction Capacitance  
VR = 4.0 V, f = 1.0 MHz  
pF  
ES2A-ES2D, Rev.  
A
1999 Fairchild Semiconductor Corporation  

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