ERA85-009
SCHOTTKY BARRIER RECTIFIER DIODES
VOLTAGE RANGE: 9 0V
CURRENT: 1.0 A
Features
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Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
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High Current Capability
A
B
A
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
C
Inverters, Free Wheeling, and Polarity
Protection Applications
D
Mechanical Data
DO-41
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Case: DO-41, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
Dim
A
Min
25.40
4.06
0.71
2.00
Max
¾
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B
5.21
0.864
2.72
C
D
Marking: Type Number
All Dimensions in mm
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Characteristic
Symbol
ERA85 -009
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
90
V
RMS Reverse Voltage
VR(RMS)
IO
63
V
A
Average Rectified Output Current @TL = 100°C
(Note 1)
1.0
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
40
A
Forward Voltage
@IF = 1.0A
VFM
IRM
Cj
0.85
V
mA
pF
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
0.5
10
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
80
RꢀJL
RꢀJA
15
50
°C/W
°C
Tj, TSTG
-65 to +150
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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