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EP1016E PDF预览

EP1016E

更新时间: 2024-11-26 18:25:51
品牌 Logo 应用领域
APITECH 测试二极管变容二极管
页数 文件大小 规格书
1页 62K
描述
Variable Capacitance Diode, Ultra High Frequency, 3pF C(T), 30V, Silicon, Abrupt,

EP1016E 技术参数

生命周期:Obsolete包装说明:O-CEMW-N2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.82
其他特性:LOW INDUCTANCE最小击穿电压:30 V
配置:SINGLE二极管电容容差:10%
最小二极管电容比:2.2标称二极管电容:3 pF
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
频带:ULTRA HIGH FREQUENCYJESD-30 代码:O-CEMW-N2
元件数量:1端子数量:2
最高工作温度:175 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:MICROWAVE
最大功率耗散:5 W认证状态:Not Qualified
最小质量因数:1400最大重复峰值反向电压:30 V
最大反向电流:0.02 µA反向测试电压:25 V
子类别:Varactors表面贴装:YES
端子形式:NO LEAD端子位置:END
变容二极管分类:ABRUPTBase Number Matches:1

EP1016E 数据手册

  

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