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EN71NS128B0 PDF预览

EN71NS128B0

更新时间: 2022-12-18 00:37:49
品牌 Logo 应用领域
EON 闪存
页数 文件大小 规格书
8页 637K
描述
Stacked Multi-Chip Product (MCP) Flash Memory and RAM

EN71NS128B0 数据手册

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EN71NS128B0  
ORDERING INFORMATION  
EN29NS 128  
B0 -  
7
D
W
P
PACKAGING CONTENT  
(Blank) = Conventional  
P = RoHS compliant  
TEMPERATURE RANGE  
W = Wireless (-25°C to +85°C)  
PACKAGE  
D = 56-Ball Very Thin Fine Pitch BGA (VFBGA)  
0.50mm pitch, 9.2mm x 8mm package  
BURST READ ACCESS TIME  
7 = 7ns  
Pseudo SRAM density  
B0 = 32Mb  
DENSITY  
128 = 128Megabit (8M x 16 Bit)  
BASE PART NUMBER  
EN = Eon Silicon Solution Inc.  
29NS = Simultaneous Read/Write, Burst Mode Flash Memory with Multiplexed I/O 1.8V  
Operation  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.eonssi.com  
6
Rev. A, Issue Date: 2009/7/24  

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