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EN29LV320C PDF预览

EN29LV320C

更新时间: 2024-10-02 11:44:55
品牌 Logo 应用领域
EON 闪存
页数 文件大小 规格书
49页 455K
描述
32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

EN29LV320C 数据手册

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EN29LV320C  
EN29LV320C  
32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory  
Boot Sector Flash Memory, CMOS 3.0 Volt-only  
FEATURES  
Single power supply operation  
- Full voltage range: 2.7 to 3.6 volts read and  
write operations  
High performance program/erase speed  
- Word program time: 8µs typical  
- Sector erase time: 100ms typical  
- Chip erase time: 8s typical  
High performance  
- Access times as fast as 70 ns  
JEDEC Standard compatible  
Low power consumption (typical values at 5  
MHz)  
- 9 mA typical active read current  
- 20 mA typical program/erase current  
- Less than 1 μA current in standby or automatic  
sleep mode  
Standard DATA# polling and toggle bits  
feature  
Erase Suspend / Resume modes:  
Read and program another Sector during  
Erase Suspend Mode  
Flexible Sector Architecture:  
- Eight 8-Kbyte sectors, sixty-three 64k-byte  
sectors  
- 8-Kbyte sectors for Top or Bottom boot  
- Sector Group protection:  
Support JEDEC Common Flash Interface  
(CFI).  
Low Vcc write inhibit < 2.5V  
Minimum 100K program/erase endurance  
Hardware locking of sectors to prevent  
program or erase operations within individual  
sectors  
Additionally, temporary Sector Unprotect  
allows code changes in previously locked  
sectors  
cycles  
RESET# hardware reset pin  
- Hardware method to reset the device to read  
mode  
WP#/ACC input pin  
- Write Protect (WP#) function allows  
protection of outermost two boot sectors,  
regardless of sector protect status  
- Acceleration (ACC) function provides  
accelerated program times  
Secured Silicon Sector  
- Provides a 128-words area for code or data  
that can be permanently protected.  
- Once this sector is protected, it is prohibited  
to program or erase within the sector again.  
Package Options  
- 48-pin TSOP (Type 1)  
- 48 ball 6mm x 8mm TFBGA  
Industrial Temperature Range  
GENERAL DESCRIPTION  
The EN29LV320C is a 32-Megabit, electrically erasable, read/write non-volatile flash memory,  
organized as 4,194,304 bytes or 2.097,152 words. Any word can be programmed typically in 8µs.  
The EN29LV320C features 3.0V voltage read and write operation, with access times as fast as 70ns  
to eliminate the need for WAIT states in high-performance microprocessor systems.  
The EN29LV320C has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)  
controls, which eliminate bus contention issues. This device is designed to allow either single Sector  
or full Chip erase operation, where each Sector can be individually protected against program/erase  
operations or temporarily unprotected to erase or program. The device can sustain a minimum of  
100K program/erase cycles on each Sector.  
.
This Data Sheet may be revised by subsequent versions  
1
© 2004 Eon Silicon Solution, Inc.,  
www.eonssi.com  
or modifications due to changes in technical specifications.  
Rev. B, Issue Date: 2011/05/13  

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