是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | TFBGA-48 | Reach Compliance Code: | unknown |
风险等级: | 5.62 | 最长访问时间: | 45 ns |
备用内存宽度: | 8 | 启动块: | BOTTOM |
命令用户界面: | YES | 数据轮询: | YES |
耐久性: | 100000 Write/Erase Cycles | JESD-30 代码: | R-PBGA-B48 |
JESD-609代码: | e0 | 长度: | 8 mm |
内存密度: | 4194304 bit | 内存集成电路类型: | FLASH |
内存宽度: | 16 | 功能数量: | 1 |
部门数/规模: | 1,2,1,7 | 端子数量: | 48 |
字数: | 262144 words | 字数代码: | 256000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 256KX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | LFBGA |
封装等效代码: | BGA48,6X8,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, LOW PROFILE, FINE PITCH | 并行/串行: | PARALLEL |
电源: | 3.3 V | 编程电压: | 3 V |
认证状态: | Not Qualified | 就绪/忙碌: | YES |
座面最大高度: | 1.3 mm | 部门规模: | 16K,8K,32K,64K |
最大待机电流: | 0.000005 A | 子类别: | Flash Memories |
最大压摆率: | 0.03 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 切换位: | YES |
类型: | NOR TYPE | 宽度: | 6 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EN29LV400AB45RBIP | EON |
获取价格 |
4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V |
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EN29LV400AB-45RBIP | EON |
获取价格 |
4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V |
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EN29LV400AB45RNCP | EON |
获取价格 |
4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V |
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EN29LV400AB45RNIP | EON |
获取价格 |
4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V |
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EN29LV400AB-45RTC | EON |
获取价格 |
4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V |
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EN29LV400AB45RTCP | EON |
获取价格 |
4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V |
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EN29LV400AB-45RTCP | EON |
获取价格 |
4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V |
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EN29LV400AB-45RTI | EON |
获取价格 |
4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V |
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EN29LV400AB45RTIP | EON |
获取价格 |
4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V |
![]() |
EN29LV400AB-45RTIP | EON |
获取价格 |
4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V |
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