是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FBGA, BGA48,6X8,32 | Reach Compliance Code: | unknown |
风险等级: | 5.84 | Is Samacsys: | N |
最长访问时间: | 90 ns | 备用内存宽度: | 8 |
启动块: | TOP | 命令用户界面: | YES |
通用闪存接口: | YES | 数据轮询: | YES |
JESD-30 代码: | R-PBGA-B48 | 内存密度: | 33554432 bit |
内存集成电路类型: | FLASH | 内存宽度: | 16 |
部门数/规模: | 8,63 | 端子数量: | 48 |
字数: | 2097152 words | 字数代码: | 2000000 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 2MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | FBGA | 封装等效代码: | BGA48,6X8,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, FINE PITCH |
并行/串行: | PARALLEL | 电源: | 3/3.3 V |
认证状态: | Not Qualified | 就绪/忙碌: | YES |
部门规模: | 8K,64K | 最大待机电流: | 0.000005 A |
子类别: | Flash Memories | 最大压摆率: | 0.03 mA |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
切换位: | YES | 类型: | NOR TYPE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EN29LV320T-90TC | EON |
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32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3. |
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EN29LV320T-90TCP | EON |
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32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3. |
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EN29LV320T-90TI | EON |
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32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3. |
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EN29LV320T-90TIP | EON |
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32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3. |
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EN29LV400A | EON |
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4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V |
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EN29LV400A_11 | EON |
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4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V |
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EN29LV400AB-45RBC | EON |
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4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V |
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EN29LV400AB45RBCP | EON |
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4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V |
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EN29LV400AB-45RBCP | EON |
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4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V |
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EN29LV400AB-45RBI | EON |
获取价格 |
4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 V |
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