Datasheet > EN29LV160JB70S

EN29LV160JB70S

更新时间： 2024-01-30 12:18:03

品牌	Logo	应用领域
其他 - ETC		闪存
页数	文件大小	规格书
44页	257K
描述
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

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EN29LV160JB70S 数据手册

EN29LV160J

EN29LV160J ******PRELIMINARY DRAFT******

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory

Boot Sector Flash Memory, CMOS 3.0 Volt-only

FEATURES

• 3.0V, single power supply operation

- Minimizes system level power requirements

• High performance program/erase speed

- Byte program time: 8µs typical

- Sector erase time: 200ms typical

- Chip erase time: 3.5s typical

• Manufactured on 0.28 µm process technology

• High performance

• JEDEC Standard program and erase

- Access times as fast as 70 ns

commands

• JEDEC standard

bits feature

polling and toggle

DATA

• Low power consumption (typical values at 5

MHz)

- 7 mA typical active read current

- 15 mA typical program/erase current

- 1 µA typical standby current (standard access

time to active mode)

• Single Sector and Chip Erase

• Sector Unprotect Mode

• Embedded Erase and Program Algorithms

• Erase Suspend / Resume modes:

Read and program another Sector during

Erase Suspend Mode

• Flexible Sector Architecture:

- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

thirty-one 64 Kbyte sectors (byte mode)

- One 8 Kword, two 4 Kword, one 16 Kword

and thirty-one 32 Kword sectors (word mode)

- Supports full chip erase

- Individual sector erase supported

- Sector protection:

Hardware locking of sectors to prevent

program or erase operations within individual

sectors

• 0.28 µm double-metal double-poly

triple-well CMOS Flash Technology

• Low Vcc write inhibit < 2.5V

• >100K program/erase endurance cycle

• 48-pin TSOP (Type 1)

• Commercial Temperature Range

Additionally, temporary Sector Group

Unprotect allows code changes in previously

locked sectors.

GENERAL DESCRIPTION

The EN29LV160J is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,

organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 10µs.

The EN29LV160J features 3.0V voltage read and write operation, with access times as fast as 55ns

to eliminate the need for WAIT states in high-performance microprocessor systems.

The EN29LV160J has separate Output Enable (

), Chip Enable (

), and Write Enable (WE)

controls, which eliminate bus contention issues. This device is designed to allow either single Sector

or full chip erase operation, where each Sector can be individually protected against program/erase

operations or temporarily unprotected to erase or program. The device can sustain a minimum of

100K program/erase cycles on each Sector.

4800 Great America Parkway, Suite 202

Santa Clara, CA 95054

Tel: 408-235-8680

Fax: 408-235-8685

Rev 0.3 Release Date: 2002/01/30

12 3 4 5 6 7...44

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与EN29LV160JB70S相关器件

型号	品牌	获取价格	描述	数据表
EN29LV160JB70SI	ETC	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160JB70SIP	ETC	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160JB70SP	ETC	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160JB70T	ETC	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160JB70TI	ETC	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160JB70TIP	ETC	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160JB70TP	ETC	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160JB90S	ETC	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160JB90SI	ETC	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160JB90SIP	ETC	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.

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