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EN25P10 PDF预览

EN25P10

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
EON 闪存
页数 文件大小 规格书
31页 386K
描述
1 Mbit Uniform Sector, Serial Flash Memory

EN25P10 数据手册

 浏览型号EN25P10的Datasheet PDF文件第25页浏览型号EN25P10的Datasheet PDF文件第26页浏览型号EN25P10的Datasheet PDF文件第27页浏览型号EN25P10的Datasheet PDF文件第28页浏览型号EN25P10的Datasheet PDF文件第29页浏览型号EN25P10的Datasheet PDF文件第30页 
EN25P10  
Revisions List  
Revision No Description  
Date  
Initial release  
A
B
2006/04/27  
2006/12/27  
1.  
Change clock rate from 50MHz to 75MHz,  
Page program time 1.4 ms typical to 1.5 ms typical  
Sector erase time 150 ms typical to 500 ms  
in page 1  
2. Change Table 8 DC Characteristics in page 21  
(1) Add I  
for 75MHz  
CC3  
3. Change Table 10 to 75MHz AC Characteristics in page 22  
(1) Change FR from 50 to 75MHz  
(2) Change fR from 33 to 50MHz  
(3) Change tCLH from 9ns to 6ns  
(4) Change tCLL from 9ns to 6ns  
(5) Change tSHQZ from 9ns to 6ns  
(6) Change tHLQZ from 9ns to 6ns  
(7) Change tHHQZ from 9ns to 6ns  
(8) Change tCLQV from 9ns to 6ns  
(9) Change Page program time 1.4ms typical to 1.5ms  
4. Add Table 11: 50MHz AC Characteristics in page 23  
(1) Change Page program time 1.4ms typical to 1.5ms  
5. Add 75MHz option in Ordering Information in page 29  
6.  
Add Package Power Dissipation Capability ( TA = 25 ) =  
1.0 W in page 25  
C
2007/5/4  
1. Change clock rate from 75MHz to 100MHz in page 1  
2.  
Change Table 7 Write Inhibit Voltage (Max) from 2V to 2.5V  
in page 20  
Add Table 10: 100MHz AC Characteristics in page 22  
4. Add 100MHz option in Ordering Information in page 30  
3.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
31  
Rev. C, Issue Date: 2007/5/4  

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