是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | 风险等级: | 5.92 |
最大集电极电流 (IC): | 0.05 A | 集电极-发射极最大电压: | 40 V |
配置: | SEPARATE, 4 ELEMENTS | 最小直流电流增益 (hFE): | 75 |
JESD-30 代码: | R-GDIP-T14 | JESD-609代码: | e0 |
元件数量: | 4 | 端子数量: | 14 |
封装主体材料: | CERAMIC, GLASS-SEALED | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 350 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EN2016ACN | ELANTEC |
获取价格 |
Power Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy | |
EN2016AJ | ELANTEC |
获取价格 |
Power Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Glas | |
EN2016AJ/883B | ELANTEC |
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Power Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Glas | |
EN2016CJ | ELANTEC |
获取价格 |
Power Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Glas | |
EN2016CM | ELANTEC |
获取价格 |
Power Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy | |
EN2016J | ELANTEC |
获取价格 |
Power Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Glas | |
EN2016L | ELANTEC |
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Power Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Meta | |
EN2016L/883B | ELANTEC |
获取价格 |
Transistor, | |
EN201D-05A | FUJI |
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Z-TRAP ENE(Nominal varistor voltage 200 to 470V | |
EN201D-07A | FUJI |
获取价格 |
Z-TRAP ENE(Nominal varistor voltage 200 to 470V |