是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | 风险等级: | 5.92 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.05 A |
集电极-发射极最大电压: | 40 V | 配置: | SEPARATE, 4 ELEMENTS |
最小直流电流增益 (hFE): | 75 | JESD-30 代码: | R-PDIP-T14 |
JESD-609代码: | e0 | 元件数量: | 4 |
端子数量: | 14 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 350 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EN2016AJ | ELANTEC |
获取价格 |
Power Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Glas |
![]() |
EN2016AJ/883B | ELANTEC |
获取价格 |
Power Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Glas |
![]() |
EN2016CJ | ELANTEC |
获取价格 |
Power Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Glas |
![]() |
EN2016CM | ELANTEC |
获取价格 |
Power Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy |
![]() |
EN2016J | ELANTEC |
获取价格 |
Power Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Glas |
![]() |
EN2016L | ELANTEC |
获取价格 |
Power Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Meta |
![]() |
EN2016L/883B | ELANTEC |
获取价格 |
Transistor, |
![]() |
EN201D-05A | FUJI |
获取价格 |
Z-TRAP ENE(Nominal varistor voltage 200 to 470V |
![]() |
EN201D-07A | FUJI |
获取价格 |
Z-TRAP ENE(Nominal varistor voltage 200 to 470V |
![]() |
EN201D-10A | FUJI |
获取价格 |
Z-TRAP ENE(Nominal varistor voltage 200 to 470V |
![]() |