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EMW2T2R

更新时间: 2024-12-02 08:43:51
品牌 Logo 应用领域
罗姆 - ROHM 光电二极管晶体管
页数 文件大小 规格书
3页 45K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, EMT5, 5 PIN

EMW2T2R 技术参数

生命周期:Obsolete零件包装代码:SC-107
包装说明:SMALL OUTLINE, R-PDSO-F5针数:5
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
最大集电极电流 (IC):0.15 A集电极-发射极最大电压:50 V
配置:COMMON BASE, 2 ELEMENTS最小直流电流增益 (hFE):120
JESD-30 代码:R-PDSO-F5元件数量:2
端子数量:5封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):180 MHz

EMW2T2R 数据手册

 浏览型号EMW2T2R的Datasheet PDF文件第2页浏览型号EMW2T2R的Datasheet PDF文件第3页 
EMW2 / EMX2 / EMX3 / UMW2N /UMX2N /  
UMX3N / FMW2 / IMX2 / IMX3  
Transistors  
General purpose (dual transistors)  
EMW2 / EMX2 / EMX3 / UMW2N / UMX2N /  
UMX3N / FMW2 / IMX2 / IMX3  
zFeatures  
1) Two 2SC2412AK chips in a EMT or UMT or SMT package.  
zEquivalent circuit  
EMX2 / UMX2N  
IMX2  
EMX3 / UMX3N  
IMX3  
EMW2 / UMW2N  
FMW2  
(3)  
(2)  
(1)  
(6)  
(4)  
(5)  
(6)  
(1)  
(3)  
(2)  
(1)  
(4)  
(5)  
(6)  
(3)  
(4)  
(2)  
(1)  
(3)  
(4)  
(5)  
(5)  
(2)  
(1)  
(4) (5)  
(3) (2)  
(4)  
(5)  
(6)  
(3)  
(2)  
(1)  
zAbsolute maximum ratings (Ta = 25°C)  
Parameter  
Collector-base voltage  
Symbol  
Limits  
60  
Unit  
V
VCBO  
VCEO  
VEBO  
Collector-emitter voltage  
Emitter-base voltage  
50  
V
7
V
Collector current  
I
C
150  
mA  
1
2
EMW2 / EMX2 / EMX3 / UMW2N / UMX2N / UMX3N  
FMW2 / IMX2 / IMX3  
150(TOTAL)  
300(TOTAL)  
150  
Collector power  
dissipation  
P
C
mW  
Junction temperature  
Storage temperature  
Tj  
°C  
°C  
Tstg  
55~+150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
zElectrical characteristics (Ta = 25°C)  
Parameter  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
Symbol  
Min.  
60  
50  
7
Typ.  
Max.  
Conditions  
Unit  
BVCBO  
BVCEO  
BVEBO  
V
V
I
C
=50µA  
=1mA  
I
I
C
V
E
=50µA  
CB=60V  
EB=7V  
I
CBO  
EBO  
CE(sat)  
FE  
0.1  
0.1  
0.4  
560  
µA  
µA  
V
V
V
Emitter cutoff current  
I
Collector-emitter saturation voltage  
DC current transfer ratio  
V
I
C/I  
B
=50mA/5mA  
h
120  
V
V
V
CE=6V, IC  
=1mA  
Transition frequency  
f
T
180  
2
MHz  
pF  
CE=12V, I  
CB=12V, I  
E
E
=−2mA, f=100MHz  
=0mA, f=1kHz  
Output capacitance  
Cob  
3.5  
Transition frequency of the device.  
zPackage, marking, and packaging specifications  
Type  
Package  
EMW2  
EMT5  
W2  
EMX2  
EMT6  
X2  
EMX3  
EMT6  
X3  
UMW2N  
UMT5  
W2  
UMX2N  
UMT6  
X2  
UMX3N  
FMW2  
SMT5  
W2  
IMX2  
SMT6  
X2  
IMX3  
SMT6  
X3  
UMT6  
X3  
Marking  
Code  
T2R  
T2R  
T2R  
TR  
TR  
TR  
T148  
3000  
T108  
3000  
T108  
3000  
Basic ordering unit (pieces)  
8000  
8000  
8000  
3000  
3000  
3000  

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