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EMF050J60U PDF预览

EMF050J60U

更新时间: 2024-11-20 12:20:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
17页 282K
描述
3-Levels Half-Bridge Inverter Stage, 60 A/57 A

EMF050J60U 数据手册

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VS-EMF050J60U  
Vishay Semiconductors  
3-Levels Half-Bridge Inverter Stage, 60 A/57 A  
FEATURES  
• Warp1 and Warp2 PFC IGBT  
• FRED Pt® and HEXFRED® antiparallel diodes  
• FRED Pt® clamping diodes  
• Integrated thermistor  
• Square RBSOA  
EMIPAK2  
• Operating frequency 60 kHz to 150 kHz  
• Low internal inductances  
• Low switching loss  
PRODUCT SUMMARY  
1° LEVEL OF HALF-BRIDGE  
VCES  
CE(ON) typical at IC = 50 A  
C at TC = 98 °C  
2° LEVEL OF HALF-BRIDGE  
VCES  
CE(ON) typical at IC = 50 A  
C at TC = 93 °C  
• Compliant to RoHS Directive 2002/95/EC  
600 V  
1.8 V  
50 A  
DESCRIPTION  
V
V
VS-EMF050J60U is an integrated solution for a multi level  
inverter half-bridge in a single package. The EMIPAK2  
package is easy to use thanks to the solderable terminals  
and provides improved thermal performance thanks to the  
exposed substrate. The optimized layout also helps to  
minimize stray parameters, allowing for better EMI  
performance.  
I
900 V  
2.73 V  
50 A  
I
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
150  
UNITS  
Operating junction temperature  
Storage temperature range  
RMS isolation voltage  
Q1 - Q4 IGBT  
TJ  
°C  
V
TStg  
VISOL  
- 40 to 125  
3500  
TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s  
Collector to emitter voltage  
Gate to emitter voltage  
Pulsed collector current  
Clamped inductive load current  
VCES  
VGES  
ICM  
600  
20  
V
V
A
A
150  
150  
88  
(1)  
ILM  
TC = 25 °C  
Continuous collector current  
Power dissipation  
IC  
A
T
C = 80 °C  
TC = 25 °C  
C = 80 °C  
60  
338  
189  
PD  
W
T
Q2 - Q3 IGBT  
Collector to emitter voltage  
Gate to emitter voltage  
Pulsed collector current  
Clamped inductive load current  
VCES  
VGES  
ICM  
900  
20  
V
V
A
A
150  
150  
85  
(2)  
ILM  
TC = 25 °C  
C = 80 °C  
TC = 25 °C  
C = 80 °C  
Continuous collector current  
Power dissipation  
IC  
A
T
57  
338  
189  
PD  
W
T
Document Number: 93494  
Revision: 18-Mar-11  
For technical questions, contact: indmodules@vishay.com  
This datasheet is subject to change without notice.  
www.vishay.com  
1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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