VS-EMF050J60U
Vishay Semiconductors
3-Levels Half-Bridge Inverter Stage, 60 A/57 A
FEATURES
• Warp1 and Warp2 PFC IGBT
• FRED Pt® and HEXFRED® antiparallel diodes
• FRED Pt® clamping diodes
• Integrated thermistor
• Square RBSOA
EMIPAK2
• Operating frequency 60 kHz to 150 kHz
• Low internal inductances
• Low switching loss
PRODUCT SUMMARY
1° LEVEL OF HALF-BRIDGE
VCES
CE(ON) typical at IC = 50 A
C at TC = 98 °C
2° LEVEL OF HALF-BRIDGE
VCES
CE(ON) typical at IC = 50 A
C at TC = 93 °C
• Compliant to RoHS Directive 2002/95/EC
600 V
1.8 V
50 A
DESCRIPTION
V
V
VS-EMF050J60U is an integrated solution for a multi level
inverter half-bridge in a single package. The EMIPAK2
package is easy to use thanks to the solderable terminals
and provides improved thermal performance thanks to the
exposed substrate. The optimized layout also helps to
minimize stray parameters, allowing for better EMI
performance.
I
900 V
2.73 V
50 A
I
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
150
UNITS
Operating junction temperature
Storage temperature range
RMS isolation voltage
Q1 - Q4 IGBT
TJ
°C
V
TStg
VISOL
- 40 to 125
3500
TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
VCES
VGES
ICM
600
20
V
V
A
A
150
150
88
(1)
ILM
TC = 25 °C
Continuous collector current
Power dissipation
IC
A
T
C = 80 °C
TC = 25 °C
C = 80 °C
60
338
189
PD
W
T
Q2 - Q3 IGBT
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
VCES
VGES
ICM
900
20
V
V
A
A
150
150
85
(2)
ILM
TC = 25 °C
C = 80 °C
TC = 25 °C
C = 80 °C
Continuous collector current
Power dissipation
IC
A
T
57
338
189
PD
W
T
Document Number: 93494
Revision: 18-Mar-11
For technical questions, contact: indmodules@vishay.com
This datasheet is subject to change without notice.
www.vishay.com
1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000