Datasheet > EMDB0N25F

EMDB0N25F

更新时间： 2024-11-19 17:15:35

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
6页	356K
描述
TO220F-3

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中文翻译

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数据手册

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EMDB0N25F 数据手册

EMDB0N25F

Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

Pin Description:

BVDSS

RDSON (MAX.)

250V

0.22Ω

18A

Single N Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±30

UNIT

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current

I_D

T_C= 100 °C

Pulsed Drain Current¹

I_DM

I_AS

Avalanche Current

L = 1mH, ID=10A, RG=25Ω

L = 0.5mH

Avalanche Energy

E_AS

E_AR

Repetitive Avalanche Energy²

T_C= 25 °C

Power Dissipation

P_D

°C

T_C= 100 °C

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

Junction-to-Case

3.3

°C / W

Junction-to-Ambient

R_JA

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

³Pulsed drain current rating is package limited

2022/12/19

p.1

12 3 4 5 6

中文翻译

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