Datasheet > EM6K1_1

EM6K1_1

更新时间： 2024-02-15 16:29:17

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
4页	72K
描述
2.5V Drive Nch+Nch MOS FET

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中文翻译

获取价格

数据手册

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EM6K1_1 数据手册

EM6K1

Transistor

2.5V Drive Nch+Nch MOS FET

EM6K1

zExternal dimensions (Unit : mm)

zStructure

Silicon N-channel MOS FET

EMT6

1.6

0.5

1.0

0.5 0.5

zFeatures

( )

1) Two 2SK3019 transistors in a single EMT package.

2) The MOS FET elements are independent, eliminating

mutual interference.

(

)

( )

1pin mark

0.22

0.13

3) Mounting cost and area can be cut in half.

4) Low on-resistance.

Each lead has same dimensions

Abbreviated symbol : K1

5) Low voltage drive (2.5V) makes this device ideal for

portable equipment.

zApplications

Interfacing, switching (30V, 100mA)

zPackaging specifications

zEquivalent circuit

Gate

(6)

(5)

(4)

Protection

Diode

∗

Package

Code

Taping

T2R

Basic ordering unit

(pieces)

Tr1

Type

8000

EM6K1

Tr2

(1)Tr1 Source

(2)Tr1 Gate

(3)Tr2 Drain

(4)Tr2 Source

(5)Tr2 Gate

(6)Tr1 Drain

∗

Gate

Protection

Diode

(1)

(2)

(3)

∗ A protection diode has been built in between the gate and

the source to protect against static electricity when the product

is in use. Use the protection circuit when rated voltages are exceeded.

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain−source voltage

Gate−source voltage

Symbol

Limits

Unit

DSS

GSS

Continuous

Pulsed

100

400

Drain current

∗

150

120

mW / TOTAL

Total power dissipation

mW / ELEMENT

Channel temperature

Storage temperature

Tch

150

°C

Tstg

−55 to +150

∗

1 Pw≤10µs, Duty cycle≤1%

2 With each pin mounted on the recommended lands.

Rev.C

1/3

12 3 4

中文翻译

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