EM1Y - EM1C
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 100 - 1000V
CURRENT: 1.0 A
Features
Low cost
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Diffused junction
Low leakage
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Low forward voltage drop
A
B
A
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
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and similar solvents
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C
The plastic material carries U/L recognition 94V-0
D
Mechanical Data
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Case: D O - 4 1 Molded Plastic
DO-41
Min
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
Dim
A
Max
25.40
4.06
¾
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B
5.21
0.864
2.72
C
0.71
D
2.00
Marking: Type Number
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
TA = 25ꢀC unless otherwise specified
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Symbol
Characteristic
EM1Y EM1Z
Unit
EM1
400
EM1A EM1B EM1C
V
Maximum recurrent peak reverse voltage
Maximum RMS voltage
100
70
200
140
200
600
420
600
800
560
800
1000
VRRM
VRMS
VDC
V
V
280
400
700
Maximum DC blocking voltage
Maximum average forw ard rectified current
100
1000
A
1.0
IF(AV)
9.5mm lead length,
@TA=75
Peak forw ard surge current
A
IFSM
45.0
0.97
8.3ms single half-sine-w ave
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage
@ 1.0 A
V
A
VF
Maximum reverse current
@TA=25
5.0
50.0
15
IR
at rated DC blocking voltage @TA=100
pF
Typical junction capacitance
Typical thermal resistance
(Note1)
(Note2)
CJ
50
Rθ
/ W
JA
Operating junction temperature range
Storage temperature range
- 55---- +150
- 55---- + 150
TJ
TSTG
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance from junction to ambient.
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