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EM1B

更新时间: 2024-01-22 20:49:47
品牌 Logo 应用领域
鲁光 - LGE 二极管
页数 文件大小 规格书
2页 174K
描述
Plastic Silicon Rectifiers

EM1B 技术参数

生命周期:Active包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.6
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

EM1B 数据手册

 浏览型号EM1B的Datasheet PDF文件第2页 
EM1Y-EM1C  
Plastic Silicon Rectifiers  
VOLTAGE RANGE: 100 --- 1000 V  
CURRENT: 1.0 A  
DO - 41  
Features  
Low cost  
Diffused junction  
Low leakage  
Low forward voltage drop  
High current capability  
Easily cleaned with Freon,Alcohol,Isopropanol  
and similar solvents  
The plastic material carries U/L recognition 94V-0  
Mechanical Data  
Dimensions in millimeters  
Case:JEDEC DO--41,molded plastic  
Polarity: Color band denotes cathode  
Weight: 0.012ounces,0.34 grams  
Mounting position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
UNITS  
EM1Y EM1Z  
EM1  
EM1A EM1B EM1C  
V
V
V
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
VRRM  
VRMS  
VDC  
Maximum DC blocking voltage  
100  
1000  
Maximum average forw ard rectified current  
A
1.0  
IF(AV)  
9.5mm lead length,  
@TA=75  
Peak forw ard surge current  
A
IFSM  
45.0  
0.97  
8.3ms single half-sine-w ave  
superimposed on rated load @TJ=125  
Maximum instantaneous forw ard voltage  
@ 1.0 A  
V
A
VF  
Maximum reverse current  
@TA=25  
5.0  
50.0  
15  
IR  
at rated DC blocking voltage @TA=100  
pF  
Typical junction capacitance  
Typical thermal resistance  
(Note1)  
(Note2)  
CJ  
50  
Rθ  
/ W  
JA  
Operating junction temperature range  
Storage temperature range  
- 55---- +150  
- 55---- + 150  
TJ  
TSTG  
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.  
2. Thermal resistance from junction to ambient.  
http://www.luguang.cn  
mail:lge@luguang.cn  

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