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ELM54801AA-N PDF预览

ELM54801AA-N

更新时间: 2024-11-23 11:46:03
品牌 Logo 应用领域
ELM-TECH /
页数 文件大小 规格书
5页 384K
描述
Dual P-channel MOSFET

ELM54801AA-N 数据手册

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Dual P-channel MOSFET  
ELM54801AA-N  
■General description  
■Features  
ELM54801AA-N uses advanced trench technology to  
• Vds=-30V  
provide excellent Rds(on) and low gate charge.  
• Id=-5A (Vgs=-10V)  
• Rds(on) < 48mΩ (Vgs=-10V)  
• Rds(on) < 57mΩ (Vgs=-4.5V)  
• Rds(on) < 80mΩ (Vgs=-2.5V)  
■Maximum absolute ratings  
Parameter  
Symbol  
Limit  
-30  
Unit  
V
Note  
Drain-source voltage  
Gate-source voltage  
Vds  
Vgs  
±
12  
V
Ta=25°C  
Ta=70°C  
-5  
-4  
Continuous drain current  
Id  
A
Pulsed drain current  
Avalanche current  
Avalanche energy  
Idm  
-28  
A
A
3
3
3
Ias, Iar  
Eas, Ear  
17  
L=0.1mH  
Ta=25°C  
Ta=70°C  
14  
mJ  
2.0  
Power dissipation  
Pd  
W
2
1.3  
Junction and storage temperature range  
Tj, Tstg  
-55 to 150  
°C  
■Thermal characteristics  
Parameter  
Symbol  
ja  
Typ.  
Max.  
62.5  
90.0  
40.0  
Unit  
Note  
1
Maximum junction-to-ambient  
Maximum junction-to-ambient  
Maximum junction-to-lead  
t≤10s  
48.0  
74.0  
32.0  
°C/W  
°C/W  
°C/W  
Steady-state  
Steady-state  
1, 4  
Rθjl  
■Pin configuration  
■Circuit  
D1  
D2  
SOP-8(TOP VIEW)  
Pin No.  
Pin name  
1
2
3
4
5
6
7
8
SOURCE2  
GATE2  
1
2
3
4
8
7
6
5
SOURCE1  
GATE1  
G1  
G2  
DRAIN1  
DRAIN1  
DRAIN2  
DRAIN2  
S1  
S2  
5 - 1  

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