Datasheet > ELM38800BA-S

ELM38800BA-S

更新时间： 2024-11-22 11:46:03

品牌	Logo	应用领域
ELM-TECH		/
页数	文件大小	规格书
4页	395K
描述
Dual N-channel MOSFET

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中文翻译

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数据手册

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ELM38800BA-S 数据手册

Dual N-channel MOSFET

ELM38800BA-S

■General description

■Features

ELM38800BA-S uses advanced trench technology to

provide excellent Rds(on), low gate charge and low gate

resistance.

• Vds=20V

• Id=6.3A

• Rds(on) < 22mΩ (Vgs=4.5V)

• Rds(on) < 26mΩ (Vgs=2.5V)

• Rds(on) < 34mΩ (Vgs=1.8V)

■Maximum absolute ratings

Parameter

Symbol

Limit

Unit

Note

Drain-source voltage

Gate-source voltage

Vds

Vgs

±12

6.3

Ta=25°C

Ta=70°C

Continuous drain current

5.0

Pulsed drain current

Avalanche current

Avalanche energy

Idm

Ias

3, 4

L=0.1mH

Ta=25°C

Ta=70°C

Eas

1.4

Power dissipation

0.9

Junction and storage temperature range

Tj, Tstg

-55 to 150

°C

■Thermal characteristics

Parameter

Symbol

Typ.

Max.

Unit

°C/W

Note

Maximum junction-to-ambient

Rθja

■Pin configuration

■Circuit

TSSOP-8(TOP VIEW)

Pin No.

Pin name

GATE1

SOURCE1

DRAIN1

DRAIN2

SOURCE2

GATE2

4 - 1

12 3 4

中文翻译

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