LED - Chip
ELС-935-17
Preliminary
10.04.2007
Technology
rev. 05/06
Type
DH
Electrodes
Radiation
Infrared
AlGaAs/GaAs
P (anode) up
typ. dimensions (µm)
360
120
typ. thickness
260 (±20) µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm,
dotted, 25% covered
LED-14
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
Symbol
VF
Min
Typ
1.2
Max
1.4
Unit
conditions
IF = 20 mA
IR = 100 µA
IF = 20 mA
IF = 50 mA
IF = 20 mA
IF = 20 mA
IF = 20 mA
Forward voltage
Reverse voltage
Radiant power*
V
V
VR
Φe
5
1.2
3.0
920
1.7
4.2
935
50
mW
mW
nm
nm
ns
Φe
Radiant power*
λp
Peak wavelength
Spectral bandwidth at 50%
Switching time
950
∆λ0.5
tr, tf
600
*Measured on bare chip on TO-18 header with EPIGAP equipment
Labeling
Lot N°
Φe(typ) [mW]
VF(typ) [V]
Quantity
Type
ELС-935-17
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 1
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545