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ELC-935-17 PDF预览

ELC-935-17

更新时间: 2022-12-23 07:46:01
品牌 Logo 应用领域
EPIGAP /
页数 文件大小 规格书
1页 94K
描述
LED - Chip

ELC-935-17 数据手册

  
LED - Chip  
ELС-935-17  
Preliminary  
10.04.2007  
Technology  
rev. 05/06  
Type  
DH  
Electrodes  
Radiation  
Infrared  
AlGaAs/GaAs  
P (anode) up  
typ. dimensions (µm)  
360  
120  
typ. thickness  
260 (±20) µm  
anode  
gold alloy, 1.5 µm  
cathode  
gold alloy, 0.5 µm,  
dotted, 25% covered  
LED-14  
Optical and Electrical Characteristics  
Tamb = 25°C, unless otherwise specified  
Test  
Parameter  
Symbol  
VF  
Min  
Typ  
1.2  
Max  
1.4  
Unit  
conditions  
IF = 20 mA  
IR = 100 µA  
IF = 20 mA  
IF = 50 mA  
IF = 20 mA  
IF = 20 mA  
IF = 20 mA  
Forward voltage  
Reverse voltage  
Radiant power*  
V
V
VR  
Φe  
5
1.2  
3.0  
920  
1.7  
4.2  
935  
50  
mW  
mW  
nm  
nm  
ns  
Φe  
Radiant power*  
λp  
Peak wavelength  
Spectral bandwidth at 50%  
Switching time  
950  
∆λ0.5  
tr, tf  
600  
*Measured on bare chip on TO-18 header with EPIGAP equipment  
Labeling  
Lot N°  
Φe(typ) [mW]  
VF(typ) [V]  
Quantity  
Type  
ELС-935-17  
Packing:
Chips on adhesive film with wire-bond side on top  
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201  
1 of 1  
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545  

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