Datasheet > ELC-940-11

ELC-940-11

更新时间： 2022-12-23 07:46:01

品牌	Logo	应用领域
EPIGAP		/
页数	文件大小	规格书
1页	98K
描述
LED - Chip

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数据手册

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ELC-940-11 数据手册

LED - Chip

ELС-940-11

Preliminary

10.04.2007

Technology

rev. 03/06

Type

Electrodes

Radiation

Infrared

AlGaAs/GaAs

P (anode) up

1000

typ. dimensions (µm)

typ. thickness

260 (±20) µm

cathode

gold alloy, 0.5 µm

anode

gold alloy, 1.5 µm

PoC-05

Optical and Electrical Characteristics

T_amb= 25°C, unless otherwise specified

Test

Parameter

Symbol

V_F

Min

Typ

Max

Unit

conditions

I_F= 20 mA

I_F= 350 mA

I_R= 10 µA

I_F= 20 mA

I_F= 350 mA

I_F= 20 mA

Forward voltage

1.2

1.6

1.3

1.8

Forward voltage²

Reverse voltage

V_F

V_R

Radiant power¹

Radiant power²

Φ_e

0.8

1.5

Φ_e

λ_P

Peak wavelength

Spectral bandwidth at 50%

Switching time

930

940

950

∆λ_0.5

t_r, t_f

600

¹Measured on bare chip on TO-18 header with EPIGAP equipment

²Measured on bare chip glued on a Ø 8 x 1mm Cu header (10 s after switched on) with EPIGAP

equipment (for information only)

Labeling

Lot N°

V_F(typ) [V]

Quantity

Φ_e(typ) [mW]

Type

ELС-940-11

Packing:

Chips on adhesive film with wire-bond side on top

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

1 of 1

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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