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EL5424ILZ-T13 PDF预览

EL5424ILZ-T13

更新时间： 2024-02-28 09:12:45
品牌 Logo 应用领域
英特矽尔 - INTERSIL 放大器
页数 文件大小 规格书
12页 589K
描述
12MHz Rail-to-Rail Buffers + 100mA VCOM Amplifier

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中文翻译

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EL5424ILZ-T13 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：QFN包装说明：VQCCN, LCC32,.2X.24,20
针数：32Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.33.00.01
风险等级：5.84放大器类型：BUFFER
最大平均偏置电流 (IIB)：0.05 µA标称带宽 (3dB)：12 MHz
25C 时的最大偏置电流 (IIB)：0.05 µA最大输入失调电压：14000 µV
JESD-30 代码：S-PQCC-N32JESD-609代码：e3
长度：8 mm湿度敏感等级：3
负供电电压上限：标称负供电电压 (Vsup)：
功能数量：12端子数量：32
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：VQCCN
封装等效代码：LCC32,.2X.24,20封装形状：SQUARE
封装形式：CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度（摄氏度）：260
电源：15 V认证状态：Not Qualified
座面最大高度：1 mm最小摆率：7 V/us
标称压摆率：15 V/us子类别：Buffer Amplifier
最大压摆率：11 mA供电电压上限：18 V
标称供电电压 (Vsup)：15 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：MATTE TIN端子形式：NO LEAD
端子节距：1 mm端子位置：QUAD
处于峰值回流温度下的最长时间：40宽度：8 mm
Base Number Matches：1

EL5424ILZ-T13 数据手册

 浏览型号EL5424ILZ-T13的Datasheet PDF文件第5页浏览型号EL5424ILZ-T13的Datasheet PDF文件第6页浏览型号EL5424ILZ-T13的Datasheet PDF文件第7页浏览型号EL5424ILZ-T13的Datasheet PDF文件第9页浏览型号EL5424ILZ-T13的Datasheet PDF文件第10页浏览型号EL5424ILZ-T13的Datasheet PDF文件第11页 
EL5224, EL5324, EL5424  
Typical Performance Curves (Continued)  
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL  
CONDUCTIVITY TEST BOARD. HTSSOP EXPOSED  
DIEPAD SOLDERED TO PCB PER JESD51-5  
JEDEC JESD51-3 LOW EFFECTIVE THERMAL  
CONDUCTIVITY TEST BOARD  
3.5  
3
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
3.333W  
909mW  
3.030W  
833mW  
2.5  
2
HTSSOP28  
HTSSOP28  
θ
=110°C/W  
θ
=30°C/W  
JA  
JA  
HTSSOP24  
1.5  
1
HTSSOP24  
θ
=33°C/W  
JA  
θ
=120°C/W  
JA  
0.5  
0
0
25  
50  
75 85 100  
125  
150  
0
25  
50  
75 85 100  
125  
150  
AMBIENT TEMPERATURE (°C)  
AMBIENT TEMPERATURE (°C)  
FIGURE 19. PACKAGE POWER DISSIPATION vs AMBIENT  
TEMPERATURE  
FIGURE 20. PACKAGE POWER DISSIPATION vs AMBIENT  
TEMPERATURE  
Applications Information  
Product Description  
V =±5V  
S
5V  
10µs  
T =25°C  
A
V
=10V  
P-P  
IN  
The EL5224, EL5324, and EL5424 unity gain buffers and  
100mA V  
amplifier are fabricated using a high voltage  
COM  
CMOS process. The buffers exhibit rail-to-rail input and  
output capability and has low power consumption (600µA  
per buffer). When driving a load of 10kΩ and 12pF, the  
buffers have a -3dB bandwidth of 12MHz and exhibits  
18V/µs slew rate. The V  
input. The output can be driving to within 2V of each supply  
rail. With a 1µF capacitance load, the GBWP is about 1MHz.  
amplifier exhibits rail-to-rail  
COM  
5V  
FIGURE 21. OPERATION WITH RAIL-TO-RAIL INPUT AND  
OUTPUT  
Correct operation is guaranteed for a supply range of 4.5V to  
16.5V.  
The Use of the Buffers  
SHORT-CIRCUIT CURRENT LIMIT  
The output swings of the buffers typically extend to within  
100mV of positive and negative supply rails with load  
currents of 5mA. Decreasing load currents will extend the  
output voltage range even closer to the supply rails.  
Figure 21 shows the input and output waveforms for the  
device. Operation is from ±5V supply with a 10kΩ load  
The buffers will limit the short circuit current to ±120mA if the  
output is directly shorted to the positive or the negative  
supply. If an output is shorted indefinitely, the power  
dissipation could easily increase such that the device may  
be damaged. Maximum reliability is maintained if the output  
continuous current never exceeds ±30mA. This limit is set by  
the design of the internal metal interconnects.  
connected to GND. The input is a 10V  
sinusoid. The  
P-P  
output voltage is approximately 9.985V  
.
P-P  
OUTPUT PHASE REVERSAL  
The buffers are immune to phase reversal as long as the  
input voltage is limited from V - -0.5V to V + +0.5V.  
S
S
Figure 22 shows a photo of the output of the device with the  
input voltage driven beyond the supply rails. Although the  
device's output will not change phase, the input's  
overvoltage should be avoided. If an input voltage exceeds  
supply voltage by more than 0.6V, electrostatic protection  
diodes placed in the input stage of the device begin to  
conduct and overvoltage damage could occur.  
8
1...56789101112

中文翻译

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