Datasheet > EGP50F/4H

EGP50F/4H

更新时间： 2023-01-03 08:14:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	186K
描述
Rectifier Diode, 1 Phase, 1 Element, 5A, 300V V(RRM), Silicon, PLASTIC, GP20, 2 PIN

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EGP50F/4H 数据手册

EGP50A thru EGP50G

Vishay Semiconductors

Glass Passivated Ultrafast Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

t_rr

5.0 A

50 V to 400 V

150 A

50 ns

V_F

0.95 V, 1.25 V

150 °C

T_jmax.

*Glass Encapsulation

GP20

technique is covered by

Patent No. 3,996,602,

brazed-lead assembly to

Patent No. 3,930,306

Features

Mechanical Data

• Cavity-free glass-passivated junction

• Ultrafast reverse recovery time

• Low forward voltage drop

Case: GP20, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• Low leakage current

• Low switching losses, high efficiency

• High forward surge capability

• Solder Dip 260 °C, 40 seconds

Polarity: Color band denotes cathode end

Typical Applications

For use in high frequency rectification and freewheel-

ing application in switching mode converters and

inverters for consumer, computer and Telecommuni-

cation

Maximum Ratings

T_A= 25 °C unless otherwise specified

Parameter

Symbol EGP50A EGP50B EGP50C EGP50D EGP50F EGP50G

Unit

Maximum repetitive peak reverse voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

300

210

300

400

280

400

Maximum RMS voltage

Maximum DC blocking voltage

100

Maximum average forward rectified current

0.375" (9.5 mm) lead length at T_L= 55 °C

I_F(AV)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

150

Operating and storage temperature range

T_J,T_STG

- 65 to + 150

°C

Document Number 88585

10-Aug-05

www.vishay.com

12 3

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