Document Number: MRF6V3090N
Rev. 1, 12/2011
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
MRF6V3090NR1
MRF6V3090NR5
MRF6V3090NBR1
MRF6V3090NBR5
Enhancement--Mode Lateral MOSFETs
Designed for commercial and industrial broadband applications with
frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast
applications.
•
Typical Performance (Narrowband Test Circuit): VDD = 50 Volts, IDQ
350 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
=
P
(W)
f
G
(dB)
η
(%)
ACPR
(dBc)
out
ps
D
470--860 MHz, 90 W, 50 V
BROADBAND
Signal Type
(MHz)
RF POWER LDMOS TRANSISTORS
DVB--T (8k OFDM)
18 Avg.
860
22.0
28.5
--62.0
•
Typical Performance (Broadband Reference Circuit): VDD = 50 Volts,
DQ = 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
I
CASE 1486--03, STYLE 1
T O -- 2 7 0 W B -- 4
PLASTIC
MRF6V3090NR1(NR5)
Output
Signal PAR Shoulder
IMD
P
f
G
η
D
out
ps
Signal Type
(W)
(MHz) (dB)
(%)
26.8
28.0
28.3
(dB)
8.6
(dBc)
--31.8
--34.4
--29.2
DVB--T (8k OFDM) 18 Avg.
470
650
860
21.6
22.9
21.9
8.7
7.9
Features
CASE 1484--04, STYLE 1
T O -- 2 7 2 W B -- 4
PLASTIC
MRF6V3090NBR1(NBR5)
•
Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,
90 Watts CW Output Power
•
•
•
•
•
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Input Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Excellent Thermal Stability
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
PARTS ARE SINGLE--ENDED
Gate
Gate
Drain
Drain
•
•
225°C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
(Top View)
Drain--Source Voltage
V
--0.5, +110
--6.0, +10
-- 65 to +150
150
Vdc
Vdc
°C
DSS
Note: Exposed backside of the package is
the source terminal for the transistor.
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
T
stg
Figure 1. Pin Connections
T
°C
C
(1,2)
Operating Junction Temperature
T
J
225
°C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
°C/W
JC
Case Temperature 76°C, 18 W CW, 50 Vdc, I
Case Temperature 80°C, 90 W CW, 50 Vdc, I = 350 mA, 860 MHz
= 350 mA, 860 MHz
0.79
0.82
DQ
DQ
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2010--2011. All rights reserved.
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
RF Device Data
Freescale Semiconductor, Inc.
1